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Petr G. Eliseev

Observed names: P . Eliseev, P . G. Eliseev, P G Eliseev, P. Eliseev, P. G. ELISEEV, P. G. Eliseev, P.G. Eliseev, Petr Eliseev, Petr G Eliseev, Petr. G. Eliseev
Observed institutions: P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Russian Academy of Sciences, University of New Mexico, Institute of Physics, Academy of Sciences of the Soviet Union, Nagoya University, Tokushima University
OpenAlex ID: A5113671138
“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
1997 · Petr G. Eliseev, Piotr Perlin, et al. · Applied Physics Letters · 547
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
2000 · P. G. Eliseev, H. Li, et al. · Applied Physics Letters · 207
Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes
1996 · Piotr Perlin, Marek Osiński, et al. · Applied Physics Letters · 170
Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers
2004 · A. A. Ukhanov, A. Stintz, et al. · Applied Physics Letters · 111
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
2001 · P.G. Eliseev, H. Li, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 109
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
1997 · Piotr Perlin, Valentin Iota, et al. · Applied Physics Letters · 94
The red σ2/kT spectral shift in partially disordered semiconductors
2003 · P. G. Eliseev · Journal of Applied Physics · 90
Thermal activation of excitons in asymmetric InAs dots-in-a-well InxGa1−xAs∕GaAs structures
2007 · T. V. Torchynska, J. L. Casas Espinola, et al. · Journal of Applied Physics · 84
Orientation dependence of the optical properties in InAs quantum-dash lasers on InP
2002 · A. A. Ukhanov, R. H. Wang, et al. · Applied Physics Letters · 82
Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells
2003 · T. V. Torchynska, J. L. Casas Espinola, et al. · physica status solidi (a) · 78
Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
1999 · Petr G. Eliseev, Marek Osin’ski, et al. · Applied Physics Letters · 70
Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire
2000 · Petr G. Eliseev, Marek Osinski, et al. · Journal of Electronic Materials · 65
Degradation of injection lasers
1973 · P.G. Eliseev · Journal of Luminescence · 65
Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
2000 · T. Wang, H. Saeki, et al. · Applied Physics Letters · 64
Single-quantum well InGaN green light emitting diode degradation under high electrical stress
1999 · Daniel L. Barton, Marek Osinski, et al. · Microelectronics Reliability · 60
Optical strength of semiconductor laser materials
1996 · P.G. Eliseev · Progress in Quantum Electronics · 60
Study of the single-mode injection laser
1973 · A. Bogatov, P. Eliseev, et al. · IEEE Journal of Quantum Electronics · 58
Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes
1997 · Petr G. Eliseev, Piotr Perlin, et al. · Journal of Electronic Materials · 42
Thermal ionisation of ground and multiply excited states in InAs quantum dots embedded into InGaAs/GaAs MQW
2003 · T.V. Torchynska, J.L. Casas Espinola, et al. · Surface Science · 33
Interaction of modes and self-stabilization of single-frequency emission from injection lasers
1983 · Alexandr P Bogatov, P G Eliseev, et al. · Soviet Journal of Quantum Electronics · 32
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Current self-distribution effect in diode lasers: analytic criterion and numerical study
1997 · P.G. Eliseev, A.G. Glebov, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 30
Ghost modes and resonant effects in AlGaN-InGaN-GaN lasers
1999 · P.G. Eliseev, G.A. Smolyakov, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 29
Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature
1985 · A É Bochkarev, L M Dolginov, et al. · Soviet Journal of Quantum Electronics · 27
Frequency beating between monolithically integrated semiconductor ring lasers
2005 · Hongjun Cao, Chiyu Liu, et al. · Applied Physics Letters · 24
Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
1999 · Petr G. Eliseev, Hong-Bo Sun, et al. · Japanese Journal of Applied Physics · 24
Works count: 205
Citation count: 2,888
H-index: 24
I10-index: 48
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