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Fari Assaderaghi

Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
1997 · F. Assaderaghi, D. Sinitsky, et al. · IEEE Transactions on Electron Devices · 437
A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
2002 · F. Assaderaghi, D. Sinitsky, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 217
A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
1994 · F. Assaderaghi, S. Parke, et al. · IEEE Electron Device Letters · 128
A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator With $< \pm \hbox{0.5-ppm}$ Frequency Stability and $< \hbox{1-ps}$ Integrated Jitter
2012 · Michael H. Perrott, James C. Salvia, et al. · IEEE Journal of Solid-State Circuits · 88
The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta
1992 · J. Chen, F. Assaderaghi, et al. · IEEE Electron Device Letters · 85
Partially-depleted SOI technology for digital logic
2003 · G.G. Shahidi, A. Ajmera, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 72
Low jitter and temperature stable MEMS oscillators
2012 · Haechang Lee, Aaron Partridge, et al. · Proceedings of the IEEE International Frequency Control Symposium · 64
Clocking and circuit design for a parallel I/O on a first-generation CELL processor
2005 · K. Chang, S. Pamarti, et al. · 58
Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance
1994 · M. Chan, F. Assaderaghi, et al. · IEEE Electron Device Letters · 53
A 0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
2002 · D.J. Schepis, F. Assaderaghi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 51
A 7.9/5.5 psec room/low temperature SOI CMOS
2002 · F. Assaderaghi, W. Rausch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 46
Versatile CMOS-MEMS integrated piezoelectric platform
2015 · J.M. Tsai, M. Daneman, et al. · International Conference on Solid-State Sensors, Actuators and Microsystems · 45
CMOS-on-SOI ESD protection networks
2005 · S. Voldman, R. Schulz, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 44
Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET
2002 · C. Wann, F. Assaderaghi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
Observation of velocity overshoot in silicon inversion layers
1993 · F. Assaderaghi, P.K. Kop, et al. · IEEE Electron Device Letters · 42
Mainstreaming of the SOI technology
1999 · G. Shahidi, H.-S. Lo, et al. · Proceedings - IEEE International SOI Conference/Proceedings · 39
BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs
2002 · P. Su, S.K.H. Fung, et al. · IEEE Custom Integrated Circuits Conference (CICC) · 38
High-field transport of inversion-layer electrons and holes including velocity overshoot
1997 · F. Assaderaghi, D. Sinitsky, et al. · IEEE Transactions on Electron Devices · 38
Electrostatic discharge protection in silicon-on-insulator technology
2003 · S. Voldman, D. Hui, et al. · Proceedings - IEEE International SOI Conference/Proceedings · 37
A 16Gb/s/link, 64GB/s bidirectional asymmetric memory interface cell
2008 · Ken Chang, Haechang Lee, et al. · IEEE Symposium on VLSI Circuits (VLSI-Circuits) · 36
A temperature-to-digital converter for a MEMS-based programmable oscillator with better than ±0.5ppm frequency stability
2012 · Michael Perrott, Jim Salvia, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 35
DTMOS: its derivatives and variations, and their potential applications
2002 · F. Assaderaghi · International Conference on Microelectronics (ICM) · 35
Monolithic 591×438 DPI ultrasonic fingerprint sensor
2016 · Xiaoyue Jiang, Hao-Yen Tang, et al. · Proceedings, IEEE micro electro mechanical systems · 32
Transient pass-transistor leakage current in SOI MOSFET's
1997 · F. Assaderaghi, G.G. Shahidi, et al. · IEEE Electron Device Letters · 32
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz f/sub T/
1997 · C. Wann, F. Assaderaghi, et al. · IEEE Electron Device Letters · 31
Works count: 86
Citation count: 2,504
H-index: 28
I10-index: 56
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