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G. Le Carval

Observed names: G Le Carval, G. Carval, Gilles Le Carval, Gilles le Carval, Le Carval, G., Le Carval, Gilles
OpenAlex ID: A5113737987
Further Insights in TFET Operation
2014 · Anthony Villalon, Gilles Le Carval, et al. · IEEE Transactions on Electron Devices · 68
Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization
2015 · Jeremy Guy, Gabriel Molas, et al. · IEEE Transactions on Electron Devices · 56
Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit
2006 · F. Mayer, C. Le Royer, et al. · IEEE Transactions on Electron Devices · 53
Experimental determination of the channel backscattering coefficient on 10–70nm-metal-gate Double-Gate transistors
2007 · Vincent Barral, T. Poiroux, et al. · Solid-State Electronics · 35
Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization
2014 · J. Guy, G. Molas, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 30
105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers
2008 · C. Le Royer, L. Clavelier, et al. · Solid-State Electronics · 30
Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits
2008 · S. Martinie, G. Le Carval, et al. · IEEE Transactions on Electron Devices · 29
Through-silicon via based 3D IC technology: Electrostatic simulations for design methodology
2008 · Rousseau, Maxime, Rozeau, Olivier, et al. · HAL · 29
Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS
2006 · F. Mayer, C. Royer, et al. · European Solid-State Device Research Conference · 24
Simulation of Electronic Transport in Silicon Nanocrystal Solids
2012 · Hadrien Lepage, Anne Kaminski-Cachopo, et al. · The Journal of Physical Chemistry C · 21
High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
2008 · C. Le Royer, B. Vincent, et al. · IEEE Electron Device Letters · 21
Comparative study of the fabricated and simulated Impact Ionization MOS (IMOS)
2007 · F. Mayer, C. Le Royer, et al. · Solid-State Electronics · 21
Film-thickness-dependent conduction in ordered Si quantum dot arrays
2012 · K Surana, H Lepage, et al. · Nanotechnology · 19
Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools
2002 · F. Charlet, C. Bermond, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 17
Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation
2009 · SÉbastien Martinie, Daniela Munteanu, et al. · IEEE Transactions on Electron Devices · 14
New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport
2008 · SÉbastien Martinie, Daniela Munteanu, et al. · IEEE Electron Device Letters · 12
Analytical and compact modelling of the I-MOS (impact ionization MOS)
2007 · F. Mayer, T. Poiroux, et al. · European Solid-State Device Research Conference · 10
Phonon transport in electronic devices: From diffusive to ballistic regime
2008 · B. Thouy, J.P. Mazellier, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 9
3D stacked channels: how series resistances can limit 3D devices performance
2007 · E. Bernard, T. Ernst, et al. · IEEE International SOI Conference (SOI) · 9
Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation
2006 · M.-A. Jaud, S. Barraud, et al. · Journal of Computational Electronics · 9
Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology
2002 · D Munteanu, G Le Carval, et al. · Solid-State Electronics · 8
Low-k dielectrics influence on crosstalk: electromagnetic analysis and characterization
2002 · C. Cregut, G. Le Carval, et al. · IEEE International Interconnect Technology Conference (IITC) · 7
An in-depth analysis of the 'Elymat' technique for characterizing metallic microcontamination in silicon: Experimental validation for iron contamination in p-type wafers
1995 · D Walz, G Le Carval, et al. · Semiconductor Science and Technology · 7
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Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis
2009 · S. Martinie, E. Sarrazin, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6
Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study
2006 · M.-A. Jaud, S. Barraud, et al. · Journal of Computational Electronics · 6
Works count: 65
Citation count: 608
H-index: 14
I10-index: 17
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