Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Byung-Il Kwak
Observed name:
Byungil Kwak
Institutions:
SK Group (United States),
SK Hynix (South Korea)
Observed institutions:
SK Group (United States),
SK Hynix (South Korea)
OpenAlex ID:
A5113784343
Gate-first high-k/metal gate DRAM technology for low power and high performance products
2015
·
Minchul Sung
, Se-Aug Jang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
27
Electron mobility enhancement in (100) oxygen-inserted silicon channel
2015
·
Nuo Xu
, Hideki Takeuchi
, et al.
·
Applied Physics Letters
·
11
Mobility Enhancement of Peripheral PMOSFET Using e-SiGe Source and Drain in Sub-50nm DRAM
2012
·
Jeong-Soo Park
, Yun-Ik Son
, et al.
·
IEEE International Memory Workshop (IMW)
·
1
Formation of Stacked SiGe Nano-bridges
2007
·
Byung-Il Kwak
·
NCSU Libraries Repository (North Carolina State University Libraries)
·
1
PDF
Si1-yCy Epitaxy from Disilane and Trimethylsilane by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition.
2010
·
Byung-Il Kwak
·
NCSU Libraries Repository (North Carolina State University Libraries)
PDF
Show more works
View as search
Works count:
5
Citation count:
40
H-index:
2
I10-index:
2
Year
Topic
Type
