Author

Ling-Cong Le

Observed names: Le Ling-Cong, Lingcong Le

Institutions: Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors

Observed institutions: Chinese Academy of Sciences, University of Florida, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors

OpenAlex ID: A5113789106

Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition

2014 · Xiaoguang He, Degang Zhao, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 16

Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes

2015 · Lingcong Le, Degang Zhao, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 13

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

2014 · Jing Yang, Degang Zhao, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 13

The effects of InGaN layer thickness on the performance of InGaN/GaN p—i—n solar cells

2013 · Liang Li, De-Gang Zhao, et al. · Chinese Physics B · 13

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

2016 · Jing Yang, De-Gang Zhao, et al. · Chinese Physics B · 11

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

2015 · Ya-Hsi Hwang, Shihyun Ahn, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 10

Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

2014 · Xiaojing Li, Degang Zhao, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 10

Performance Improvement of GaN-Based Violet Laser Diodes

2017 · De-Gang Zhao, De-Sheng Jiang, et al. · Chinese Physics Letters · 7

Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

2015 · Xiaojing Li, Degang Zhao, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 7

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

2013 · Jing Yang, De-Gang Zhao, et al. · Chinese Physics B · 7

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

2015 · Xiao-Jing Li, De-Gang Zhao, et al. · Chinese Physics B · 6

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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

2011 · Ling-Cong Le, De-Gang Zhao, et al. · Chinese Physics B · 6

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Electronic structure and optical properties of transition metal doped titanate nanotubes

2010 · Le Ling-Cong, Ma Xin-Guo, et al. · Acta Physica Sinica · 6

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

2014 · Jing Yang, De-Gang Zhao, et al. · Chinese Physics B · 5

Comparative study of the differential resistance of GaAs- and GaN-based laser diodes

2016 · Xiang Li, Zongshun Liu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 4

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

2015 · Xiao-Jing Li, De-Gang Zhao, et al. · Chinese Physics B · 3

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

2015 · Shihyun Ahn, Weidi Zhu, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 3

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Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

2014 · Jing Yang, Degang Zhao, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 3

Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity

2015 · Jing Yang, De-Gang Zhao, et al. · IEEE Journal of Photovoltaics · 2

The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

2013 · Liang Li, De-Gang Zhao, et al. · Chinese Physics Letters · 2

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Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN

2013 · Li Xiao-Jing, Zhao De-Gang, et al. · Acta Physica Sinica · 2

Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode

2015 · Feng Liang, Ping Chen, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 1

Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition

2013 · Wu Liang-Liang, Zhao De-Gang, et al. · Acta Physica Sinica · 1

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

2015 · Xiao-Guang He, De-Gang Zhao, et al. · Chinese Physics B

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

2014 · Xiao-Jing Li, De-Gang Zhao, et al. · Chinese Physics B

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Works count: 25

Citation count: 151

H-index: 7

I10-index: 7