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M.G. Jaikumar
Observed names:
Jaikumar M G,
M. G. Jaikumar
Institutions:
National Institute of Technology Calicut,
Indian Institute of Technology Madras
Observed institutions:
National Institute of Technology Calicut,
Indian Institute of Technology Madras
OpenAlex ID:
A5113908258
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
2019
·
M.G. Jaikumar
, K. Akshay
, et al.
·
Solid-State Electronics
·
6
Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs
2012
·
M.G. Jaikumar
, Shreepad Karmalkar
·
Materials science forum
·
6
On the simulation and analytical modeling of on-state DC characteristics of Silicon Carbide Double-implanted MOSFETs
2015
·
M.G. Jaikumar
, R. Ramakrishna Rao
, et al.
·
Solid-State Electronics
·
4
Charge Sheet Super Junction in 4H-Silicon Carbide
2020
·
K. Akshay
, M. G. Jaikumar
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
2
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Works count:
7
Citation count:
18
H-index:
3
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