Get started
Author

Yoshitaka Sugawara

Observed names: Yoshitaka SUGAWARA, 良孝 菅原, 菅原良孝
OpenAlex ID: A5113948884
Annealing effects on single Shockley faults in 4H-SiC
2006 · Toshiyuki Miyanagi, Hidekazu Tsuchida, et al. · Applied Physics Letters · 84
6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
2000 · Yoshitaka Sugawara, Katsunori Asano, et al. · Materials science forum · 55
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
2005 · Hidekazu Tsuchida, Toshiyuki Miyanagi, et al. · Materials science forum · 41
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
2000 · Hiroshi Yano, Toshio Hirao, et al. · Materials science forum · 34
Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
2005 · Hidekazu Tsuchida, Isaho Kamata, et al. · Japanese Journal of Applied Physics · 27
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2
2002 · Yoshitaka Sugawara, Katsunori Asano, et al. · Materials science forum · 21
SiC Devices for High Voltage High Power Applications
2004 · Yoshitaka Sugawara · Materials science forum · 20
High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
2002 · Tsunenobu Kimoto, Nao Miyamoto, et al. · Journal of Applied Physics · 20
PDF
3.6 kV 4H-SiC JBS Diodes with Low RonS
2000 · Yoshitaka Sugawara, Katsunori Asano, et al. · Materials science forum · 20
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
2005 · Koji Nakayama, Yoshitaka Sugawara, et al. · Materials science forum · 17
Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
2008 · Koji Nakayama, Yoshitaka Sugawara, et al. · Materials science forum · 12
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
2006 · Hidekazu Tsuchida, Isaho Kamata, et al. · Materials science forum · 11
Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2
2008 · Ryosuke Ishii, Koji Nakayama, et al. · Materials science forum · 6
Fast epitaxial growth of high-purity 4H-SiC( $$000\bar 1$$ ) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition
2005 · Katsunori Danno, Tsunenobu Kimoto, et al. · Journal of Electronic Materials · 6
Rapidly Advancing Developments of SiC Power Devices and their Applications
2005 · Yoshitaka SUGAWARA · The Journal of the Institute of Electrical Engineers of Japan · 6
PDF
Highly reliable high-temperature superplastic Al-Zn eutectoid solder joining with stress relaxation characteristics for next generation SiC power semiconductor devices
2017 · Jin Onuki, Akio Chiba, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
2008 · Yoshitaka Sugawara, Shuuji Ogata, et al. · Materials science forum · 5
Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
2007 · R. Ishii, Toshiyuki Miyanagi, et al. · Materials science forum · 5
Performance and application impact of widegap power semiconductor devices focusing on SiC
1999 · Yoshitaka Sugawara · Electronics and Communications in Japan (Part II Electronics) · 5
Developments of SiC devices and SiC inverters aimed at electric power applications
2019 · Yoshitaka Sugawara · Electrical Engineering in Japan · 4
PDF
Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p–i–n Diode
2011 · Koji Nakayama, Yoshitaka Sugawara, et al. · Japanese Journal of Applied Physics · 4
PDF
Heavily Electron-irradiated High Resistive 4H-SiC pin diode for Turn-on Snubber of 200kVA Class High Power SiCGT Inverter
2008 · Katsunori Asano, Yoshitaka Sugawara, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4
Advances in SiC GTO Development and Its Applications
2006 · Yoshitaka Sugawara · Materials science forum · 4
The Dielectrically Isolated High Voltage IC Technology
1983 · Yoshitaka Sugawara, Tatsuya Kamei, et al. · Japanese Journal of Applied Physics · 4
PDF
“Integrated Photo-coupled Semiconductor Crosspoint Switches”
1979 · Yoshitaka Sugawara, Tatsuya Kamei, et al. · Japanese Journal of Applied Physics · 4
PDF
Works count: 68
Citation count: 452
H-index: 11
I10-index: 12
Year
Topic
Type