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Jack O. Chu

Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane
1988 · Joseph M. Jasinski, Jack O. Chu · The Journal of Chemical Physics · 202
Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications
2006 · Steven J. Koester, Jeremy D. Schaub, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 147
Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition
1991 · Brian Cunningham, Jack O. Chu, et al. · Applied Physics Letters · 122
Absolute rate constants for silylene reactions with hydrocarbons at 298 K
1987 · Jack O. Chu, David B. Beach, et al. · The Journal of Physical Chemistry · 59
Diode laser probes of vibrational excitation in CO2 caused by hot atoms from excimer laser photolysis
1984 · Jack O. Chu, Carol F. Wood, et al. · The Journal of Chemical Physics · 35
Infrared emission studies of vibrational excitation in CH3 fragments produced from ArF and KrF laser photolysis of Cd(CH3)2 and Zn(CH3)2
1985 · Jack O. Chu, George W. Flynn, et al. · Chemical Physics Letters · 28
Spectral distribution of CO2 vibrational states produced by collisions with fast hydrogen atoms from laser photolysis of HBra)
1983 · Jack O. Chu, George W. Flynn, et al. · The Journal of Chemical Physics · 25
Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node
2007 · Kazuya Ohuchi, Christian Lavoie, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
2011 · Timothy J. McArdle, Jack O. Chu, et al. · Applied Physics Letters · 17
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High-speed lateral PIN photodiodes in silicon technologies
2004 · Jeremy D. Schaub, Steven J. Koester, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 13
Erbium-Doped Silicon Prepared by UHV/CVD
1992 · David B. Beach, Reuben T. Collins, et al. · MRS Proceedings · 11
Extendibility of NiPt silicide to the 22-nm node CMOS technology
2008 · Kazuya Ohuchi, Christian Lavoie, et al. · International Workshop on Junction Technology · 6
Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths
2000 · Wu Lu, Steven J. Koester, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 5
Metal-catalyzed graphitization in Ni-C alloys and amorphous-C/Ni bilayers
2011 · Katherine L. Saenger, Christian Lavoie, et al. · MRS Proceedings · 1
High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS
2006 · Huiling Shang, Jack O. Chu, et al. · ECS Transactions · 1
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Multi-Layer Epitaxial Graphene Formed from Poly-Crystalline Silicon Carbide Grown on C-Plane Sapphire
2011 · Timothy McArdle, Jack O. Chu, et al. · Bulletin of the American Physical Society
Performance Assessment of Ge-on-SOI-photodetector / Si-CMOS Receivers for High-Speed Optical Communications
2006 · Steve Koester, Laurent Schares, et al. · ECS Transactions
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Ge-on-Insulator Photodetectors for High-Speed Optical Interconnects
2006 · Steve Koester, Laurent Schares, et al. · ECS Meeting Abstracts
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Laser-Initiated Dry Etching of SiO2
1985 · Jack O. Chu, George W. Flynn, et al. · Topical Meeting on Microphysics of Surfaces, Beams, and Adsorbates
Works count: 19
Citation count: 692
H-index: 11
I10-index: 11
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