Author

Takase Shimizu

Institution: NTT (Japan)

Observed institution: NTT (Japan)

OpenAlex ID: A5153522147

In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with < 10 −22 A Leakage Determined by Single-Electron Counting

2026 · Katsuhiko Nishiguchi, Toshiaki Hayashi, et al. · IEEE Electron Device Letters

Works count: 1

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