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12174060

Funded outputs count: 59
Funder award ID: 12174060
OpenAlex ID: G19089914
Spatially Discrete Aluminum Nanoclusters for Controllable and Damage‐Free Doping of 2D Semiconductors
2026 · Zhejia Zhang, Jingjie Zhou, et al. · Advanced Functional Materials
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Dimensional crossover and local strain induced deflection of the spin spiral state in multiferroic NiI2
2026 · Tianxing Jiang, Lianchuang Li, et al. · 中国科学通报：英文版
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Machine learning Hamiltonian enables scalable and accurate defect calculations: the case of oxygen vacancies in amorphous SiO2
2026 · Zhenxing Dai, Yang Zhong, et al. · npj Computational Materials · 1
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Machine‐Learning Hamiltonians for Predicting Formation Energies of Charged Defects From Small to Large Supercells
2026 · Mingjue Ni, Zhenxing Dai, et al. · Advanced Theory and Simulations
Machine learning Hamiltonian enables scalable and accurate defect calculations: The case of oxygen vacancies in amorphous SiO$_2$
2026 · Dai, Zhenxing, Yang, Zhong, et al. · arXiv (Cornell University)
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A General and Non-Destructive P-Type Doping Strategy Toward 2-D Complementary Technology
2026 · Guang-Hua Xu, Shiyou Chen, et al. · IEEE Electron Device Letters · 1
Strength of Kitaev interaction in Na3Co2SbO6 and Na3Ni2BiO6
2026 · Zefeng Chen, Binhua Zhang, et al. · Science China Physics Mechanics and Astronomy · 2
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Atomistic mechanisms of opposite threshold voltage shift induced by La and Al doping in HfO2-based gate stacks: First-principles insights
2026 · Xiaochen Zhang, Shuqi Tang, et al. · Applied Physics Letters
Machine learning interatomic potentials accelerate defect exploration in amorphous silica
2026 · Xinpeng Li, Xinjing Guo, et al. · Physical Review Materials
Attention Mechanism in Line Graph Neural Network for Material Property Prediction
2026 · Liulei Shao, Menglin Huang, et al. · Advanced Theory and Simulations · 2
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Microscopic Evidence of Spin-Driven Multiferroicity and Topological Spin Textures in Monolayer NiI 2
2025 · Haitao Wang, Tianxing Jiang, et al. · Physical Review Letters · 6
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Hybrid-gate MoS2 2T0C DRAM for low-power multi-bit storage with high linearity
2025 · Zhejia Zhang, Saifei Gou, et al. · National Science Review · 1
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One-defect one-potential strategy for accurate machine learning prediction of phonons in defect-containing supercells
2025 · Junjie Zhou, Xinpeng Li, et al. · Physical review. B./Physical review. B · 3
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Generalized A(n)BC Recombination Model in Semiconductors with Multilevel Defects
2025 · Shanshan Wang, Menglin Huang, et al. · Journal of the American Chemical Society · 6
Si / Si O 2 MOSFET reliability physics: From four-state model to all-state model
2025 · Xinjing Guo, Menglin Huang, et al. · Physical Review Applied · 2
Efficient construction of effective Hamiltonians with a hybrid machine learning method
2025 · Yang Cheng, Binhua Zhang, et al. · APL Computational Physics · 1
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Statistics on Oxygen Vacancy Defects in Amorphous HfO 2 : A Neural‐Network Interatomic Potential Assisted High‐Throughput Prediction
2025 · Shuqi Tang, Kang Wang, et al. · Small Methods
Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design
2025 · Kang Wang, Menglin Huang, et al. · Advanced Functional Materials · 4
Identification of luminescent defects in wide-bandgap semiconductors using first-principles
2025 · Ruirong Bai, Zhennan Lin, et al. · Journal of Physics Condensed Matter · 3
Role of domain walls on imprint and fatigue in HfO 2 -based ferroelectrics
2025 · Muting Xie, Hongyu Yu, et al. · Physical review. B./Physical review. B · 9
Deterministic and efficient switching of sliding ferroelectrics
2025 · Shihan Deng, Hongyu Yu, et al. · Physical review. B./Physical review. B · 12
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Spin-charge-orbital order in nickelate superconductors
2025 · Binhua Zhang, Changsong Xu, et al. · Physical review. B./Physical review. B · 9
Neural‐Network Potential for Defect Formation Induced by Knock‐On Irradiation Damage in 4H‐SiC
2025 · Wei Liu, Pengsheng Guo, et al. · Advanced Electronic Materials · 2
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Defect phonon renormalization during nonradiative multiphonon transitions in semiconductors
2025 · Junjie Zhou, Shanshan Wang, et al. · Physical review. B./Physical review. B · 9
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A Generalized Bond Switching Monte Carlo method for amorphous structure generation
2025 · Zhengneng Zheng, Fan Zheng, et al. · Computational Materials Today · 4
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