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SKL202302026

Funded outputs count: 17
Funder award ID: SKL202302026
OpenAlex ID: G2291484333
Machine learning-assisted ultra-selective tungsten metasurface absorber/emitter for high-efficiency Vis-NIR photothermal conversion
2026 · Riaz Ali, Wei Su, et al. · Applied Thermal Engineering
Phenethylammonium cations induced (112)-Oriented MAPbI3 single crystals for ultra-sensitive photodetection
2026 · Rongxue Zhou, Bo Lai, et al. · Materials Today Physics
Broad-spectrum (UV-vis-Nir) high-performance photodetector based on perovskite/quantum dot tandem heterostructure
2026 · Yixuan Li, Yaxin Zhao, et al. · Journal of Materials Chemistry C · 1
Enhanced light extraction efficiency via double-mesa structure for 273 nm and 244 nm AlGaN-based deep ultraviolet light-emitting diodes
2025 · Kexi Liu, Ke Jiang, et al. · Optics & Laser Technology · 3
Photogenerated Carrier Reconstructed Ion Concentration Gradients for Moisture Electricity Generators
2025 · Fei Yu, Yaohao Zhang, et al. · Advanced Materials · 5
Multifunctional Passivation of Pb/I Defect Sites and Carrier Dynamics Optimization Based on Femtosecond Laser Beat Effect
2025 · Ziyuan Huang, Jun Xing, et al. · Laser & Photonics Review · 2
Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications
2025 · Rui Sun, Yuping Jia, et al. · Light Science & Applications · 6
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A (111) Facet‐Dominated Carbon Dots‐Perovskite Composite Crystal Matrix for Highly Stable Photodetector
2025 · Ying Li, Jun Xing, et al. · Small · 1
Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems
2025 · Zhiwei Xie, Ke Jiang, et al. · Advanced Materials · 47
Enhancing hole injection efficiency in an AlGaN-based deep ultraviolet laser diode by three-terminal structure with the AlScN ferroelectric layer
2025 · Ruihua Chen, Ke Jiang, et al. · Optics Letters · 4
Understanding surface morphology evolution in magnetron sputtered AlN templates: mitigating tensile stress and enhancing crystal quality
2025 · Li Jiang, Jianwei Ben, et al. · CrystEngComm · 2
Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode
2024 · Kexi Liu, Ke Jiang, et al. · Optics Letters · 9
Impact of the number of well-barrier pair in the MQWs on the carrier distribution and confinement for the AlGaN-based far-UVC LEDs
2024 · Xianjun Wang, Ke Jiang, et al. · Optical Materials Express · 3
Heterojunction polarization enhancement and shielding for AlGaN-based solar-blind ultraviolet avalanche detectors
2024 · Bingxiang Wang, Ke Jiang, et al. · Optics Letters · 3
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors
2024 · Zhiwei Xie, Ke Jiang, et al. · Light Science & Applications · 42
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The Insertion of an AlN Spacer between the Barrier and the Channel Layer for a Polarization-Enhanced AlGaN-Based Solar-Blind Ultraviolet Detector
2024 · Tong Fang, Ke Jiang, et al. · ACS Applied Electronic Materials · 10
Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging
2024 · Bingxiang Wang, Ke Jiang, et al. · Journal of Materials Chemistry C · 7
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