Predominance of quantum well structure for solar cell application from a non-radiative electron transition loss point of view
Description: We discussed experimentally which nanostructures among quantum wells, quantum wires, and quantum dots are the most promising targets for future research in semiconductor quantum structure solar cells with high photovoltaic conversion efficiency. The research was mainly conducted for three structures. They are AlGaAs quantum dots fabricated by droplet epitaxy, InGaAs/GaAsP with strain-relaxation layers inserted, and WoW-type InGaAs/GaAsP structures. The WoW structure is similar to quantum wires. We have analyzed the relaxation process of photo-excited carriers and have shown a guideline for fabricating highly efficient and stable nanostructured solar cell devices by starting from a quantum well structure. The structure can be precisely fabricated and easily modulated for devices with higher conversion efficiency.
Amount: ¥4,420,000
Funding type: research
Funder scheme: Grant-in-Aid for Scientific Research (C)
Start date: 2018-04-01
End date: 2024-03-31
Investigator: TETSUO IKARI
Institution: University of Miyazaki
Funded outputs count: 12
Funder award ID: 18K04876
OpenAlex ID: G5259163633