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Nstc 112-2923-m-002-004

Funded outputs count: 4
Funder award ID: NSTC 112-2923-M-002-004
OpenAlex ID: G7996096169
Epitaxial growth of strain-relaxed GeSn alloys on Si utilizing Sn-composition-graded buffer layer for mid-infrared photodetectors
2026 · Kuo-Chih Lee, Ping-Chien Hsieh, et al. · Optical Materials
Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics
2024 · Radhika Bansal, Yue-Tong Jheng, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 12
Dark Current Analysis on GeSn p-i-n Photodetectors
2023 · Soumava Ghosh, Greg Sun, et al. · Sensors · 50
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SMALL-ANGLE SCATTERING BY RADIATION-INDUCED PRECIPITATIONS IN Pb--Ni ALLOYS.
1968 · O. Wohofsky, W. Waidelich · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
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