Fraunhofer Institute for Photonic Microsystems

Homepage: ipms.fraunhofer.de

Alternate names: Fraunhofer IPMS, Fraunhofer-Institut für Photonische Mikrosysteme

Parent institution: Fraunhofer-Gesellschaft

Child institution: Center Nanoelectronic Technologies

ROR: 020n3fw10

OpenAlex ID: I4210110247

Ferroelectricity in hafnium oxide thin films

2011 · T. S. Böscke, J. Müller, et al. · Applied Physics Letters · 2,833

Ferroelectricity in Simple Binary ZrO 2 and HfO 2

2012 · Johannes Müller, Tim S. Böscke, et al. · Nano Letters · 1,833

Highly Conductive PEDOT:PSS Electrode with Optimized Solvent and Thermal Post‐Treatment for ITO‐Free Organic Solar Cells

2011 · Yong Hyun Kim, Christoph Sachse, et al. · Advanced Functional Materials · 1,459

Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 ‐Based Films

2015 · Min Hyuk Park, Young Hwan Lee, et al. · Advanced Materials · 1,189

Incipient Ferroelectricity in Al‐Doped HfO 2 Thin Films

2012 · Stefan Mueller, Johannes Mueller, et al. · Advanced Functional Materials · 861

Degradation Mechanisms and Reactions in Organic Light-Emitting Devices

2015 · Sebastian Scholz, Denis Kondakov, et al. · Chemical Reviews · 742

Ferroelectricity in yttrium-doped hafnium oxide

2011 · J. Müller, U. Schröder, et al. · Journal of Applied Physics · 705

Stabilizing the ferroelectric phase in doped hafnium oxide

2015 · M. Hoffmann, U. Schroeder, et al. · Journal of Applied Physics · 606

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

2011 · J. Müller, T. S. Böscke, et al. · Applied Physics Letters · 598

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

2017 · S. Dunkel, M. Trentzsch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 540

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

2013 · J. Muller, T. S. Boscke, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 506

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

2015 · J. Müller, P. Polakowski, et al. · ECS Journal of Solid State Science and Technology · 431

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Ferroelectricity in undoped hafnium oxide

2015 · Patrick Polakowski, Johannes Müller · Applied Physics Letters · 419

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

2014 · Uwe Schroeder, Ekaterina Yurchuk, et al. · Japanese Journal of Applied Physics · 410

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A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

2016 · M. Trentzsch, S. Flachowsky, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 408

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

2013 · Dayu Zhou, Jin Xu, et al. · Applied Physics Letters · 408

Phase transitions in ferroelectric silicon doped hafnium oxide

2011 · T. S. Böscke, St. Teichert, et al. · Applied Physics Letters · 385

Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

2016 · Ekaterina Yurchuk, Johannes Muller, et al. · IEEE Transactions on Electron Devices · 369

Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

2011 · T. S. Boscke, J. Muller, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 355

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

2017 · Halid Mulaosmanovic, Johannes Ocker, et al. · ACS Applied Materials & Interfaces · 344

Optimization of ECG Classification by Means of Feature Selection

2011 · Tanis Mar, Sebastian Zaunseder, et al. · IEEE Transactions on Biomedical Engineering · 325

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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

2018 · T. Ali, P. Polakowski, et al. · IEEE Transactions on Electron Devices · 294

Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG

2012 · J. Muller, E. Yurchuk, et al. · Symposium on VLSI Technology · 288

Novel ferroelectric FET based synapse for neuromorphic systems

2017 · H. Mulaosmanovic, J. Ocker, et al. · Symposium on VLSI Technology · 276

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

2012 · Stefan Mueller, Johannes Muller, et al. · IEEE Transactions on Device and Materials Reliability · 233

Works count: 1,276

Citation count: 84,860