Leibniz Institute for Crystal Growth

Homepage: ikz-berlin.de

Alternate name: Leibniz-Institut für Kristallzüchtung

Parent institution: Leibniz Association

ROR: 037p86664

OpenAlex ID: I858866802

Room-temperature ferroelectricity in strained SrTiO3

2004 · J. H. Haeni, P. Irvin, et al. · Nature · 2,175

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Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

2004 · K. J. Choi, M. Biegalski, et al. · Science · 1,960

Mechanism of Lithium Metal Penetration through Inorganic Solid Electrolytes

2017 · Lukas Porz, Tushar Swamy, et al. · Advanced Energy Materials · 1,117

A strong ferroelectric ferromagnet created by means of spin–lattice coupling

2010 · June Hyuk Lee, Lei Fang, et al. · Nature · 754

Electron spin coherence exceeding seconds in high-purity silicon

2011 · Alexei M. Tyryshkin, Shinichi Tojo, et al. · Nature Materials · 712

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On the bulk β-Ga2O3 single crystals grown by the Czochralski method

2014 · Zbigniew Galazka, Klaus Irmscher, et al. · Journal of Crystal Growth · 663

Catalytic Activity of Faceted Gold Nanoparticles Studied by a Model Reaction: Evidence for Substrate-Induced Surface Restructuring

2011 · Stefanie Wunder, Yan Lu, et al. · ACS Catalysis · 574

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs

2016 · Andrew J. Green, Kelson D. Chabak, et al. · IEEE Electron Device Letters · 571

Electrical properties of β -Ga2O3 single crystals grown by the Czochralski method

2011 · K. Irmscher, Z. Galazka, et al. · Journal of Applied Physics · 565

Elastic strain engineering of ferroic oxides

2014 · Darrell G. Schlom, Long-Qing Chen, et al. · MRS Bulletin · 502

Electron ptychography achieves atomic-resolution limits set by lattice vibrations

2021 · Zhen Chen, Yi Jiang, et al. · Science · 486

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A strong ferroelectric ferromagnet created by means of spin–lattice coupling

2011 · June Hyuk Lee, Lei Fang, et al. · Nature · 484

Czochralski growth and characterization of β‐Ga2O3 single crystals

2010 · Z. Galazka, R. Uecker, et al. · Crystal Research and Technology · 464

Czochralski grown Ga2O3 crystals

2000 · Y. Tomm, P. Reiche, et al. · Journal of Crystal Growth · 438

β -Ga 2 O 3 for wide-bandgap electronics and optoelectronics

2018 · Zbigniew Galazka · Semiconductor Science and Technology · 429

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Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide

2022 · Arnab Bose, Nathaniel J. Schreiber, et al. · Nature Electronics · 419

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Observation of Atomlike Nitrogen in Nitrogen-Implanted Solid C60

1996 · T. Almeida Murphy, Th. Pawlik, et al. · Physical Review Letters · 409

Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28

2013 · Kamyar Saeedi, Stephanie Simmons, et al. · Science · 398

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Scaling-Up of Bulk β-Ga 2 O 3 Single Crystals by the Czochralski Method

2016 · Zbigniew Galazka, Reinhard Uecker, et al. · ECS Journal of Solid State Science and Technology · 384

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Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

2002 · Seung-Gu Lim, Stas Kriventsov, et al. · Journal of Applied Physics · 376

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β -Ga2O3 substrate with high breakdown voltage

2016 · Kelson D. Chabak, Neil Moser, et al. · Applied Physics Letters · 372

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

2012 · M. Mohamed, K. Irmscher, et al. · Applied Physics Letters · 364

Experimental electronic structure of In2O3and Ga2O3

2011 · Christoph Janowitz, Valentina Scherer, et al. · New Journal of Physics · 358

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High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

2014 · Wan Sik Hwang, Amit Verma, et al. · Applied Physics Letters · 343

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$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

2017 · Andrew Joseph Green, Kelson D. Chabak, et al. · IEEE Electron Device Letters · 322

Works count: 2,742

Citation count: 192,300