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Keyword

deep levels

Description: Electronic defect states located deep within a semiconductor’s band gap, studied for their effects on carrier behavior and device performance.
Wikidata ID: wiki/Q5250052
OpenAlex ID: keywords/deep-level-defects
Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells
2017 · Woon Seok Yang, Byung-Wook Park, et al. · Science · 5,447
Perovskite solar cells with atomically coherent interlayers on SnO2 electrodes
2021 · Hanul Min, Do Yoon Lee, et al. · Nature · 3,176
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
1977 · C. H. Henry, D. V. Lang · Physical review. B, Solid state · 1,209
Reproducible resistance switching in polycrystalline NiO films
2004 · S. Seo, M. J. Lee, et al. · Applied Physics Letters · 932
Thin-Film Preparation and Characterization of Cs3Sb2I9: A Lead-Free Layered Perovskite Semiconductor
2015 · Bayrammurad Saparov, Feng Hong, et al. · Chemistry of Materials · 813
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4
2010 · Shiyou Chen, Ji-Hui Yang, et al. · Physical Review B · 740
Semi-Insulating III–V Materials
1980 · G. J. Rees · Birkhäuser Boston eBooks · 731
The electronic structure of impurities and other point defects in semiconductors
1978 · Sokrates T. Pantelides · Reviews of Modern Physics · 691
Point Defects in Semiconductors II
1983 · Jacques Bourgoin, Michel Lannoo · Springer series in solid-state sciences · 635
Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency
2018 · Xixing Wen, Chao Chen, et al. · Nature Communications · 582
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Strong Covalency-Induced Recombination Centers in Perovskite Solar Cell Material CH3NH3PbI3
2014 · Michael L. Agiorgousis, Yi-Yang Sun, et al. · Journal of the American Chemical Society · 564
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
1971 · R. Castagné, A. Vapaille · Surface Science · 538
Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn
1999 · Sunglae Cho, Jing Ma, et al. · Applied Physics Letters · 527
Photoluminescence of Al x Ga1− x As alloys
1994 · Lorenzo Pavesi, Mario Guzzi · Journal of Applied Physics · 496
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
2012 · Julien Vidal, Stephan Lany, et al. · Applied Physics Letters · 479
Degradation of hexagonal silicon-carbide-based bipolar devices
2006 · M. Skowronski, S. Ha · Journal of Applied Physics · 474
Deep-level optical spectroscopy in GaAs
1981 · A. Chantre, G. Vincent, et al. · Physical review. B, Condensed matter · 461
Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature
2009 · O. Lupan, V.V. Ursaki, et al. · Sensors and Actuators B Chemical · 458
Charge and phonon transport in PbTe-based thermoelectric materials
2018 · Yu Xiao, Li-Dong Zhao · npj Quantum Materials · 424
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Hydrogen in semiconductors
1991 · J. I. Pánkové, N. M. Johnson, et al. · 385
Band structure engineering and defect control of Ta3N5 for efficient photoelectrochemical water oxidation
2020 · Yequan Xiao, Chao Feng, et al. · Nature Catalysis · 378
Predicting Dislocations and Grain Boundaries in Two-Dimensional Metal-Disulfides from the First Principles
2012 · Xiaolong Zou, Yuanyue Liu, et al. · Nano Letters · 359
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
2012 · Michael J. Uren, Janina Moreke, et al. · IEEE Transactions on Electron Devices · 355
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Device Postannealing Enabling over 12% Efficient Solution‐Processed Cu 2 ZnSnS 4 Solar Cells with Cd 2+ Substitution
2020 · Zhenghua Su, Guangxing Liang, et al. · Advanced Materials · 352
Electronic structures and doping of InN, Inx Ga1−x N, and Inx Al1−x N
1989 · David W. Jenkins, John D. Dow · Physical review. B, Condensed matter · 352
Works count: 12,460
Citation count: 183,300
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