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drain current
Description:
The electrical current flowing through the drain terminal of a field-effect transistor during operation.
Primary topic:
Advancements in Semiconductor Devices and Circuit Design (41%)
Related topics:
Advancements in Semiconductor Devices and Circuit Design (41%),
GaN-based semiconductor devices and materials (14%)
OpenAlex ID:
keywords/drain-current
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
1987
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F. Balestra
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IEEE Electron Device Letters
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752
Label-Free Protein Biosensor Based on Aptamer-Modified Carbon Nanotube Field-Effect Transistors
2006
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Kenzo Maehashi
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Analytical Chemistry
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661
Conductivity behavior in polycrystalline semiconductor thin film transistors
1982
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Journal of Applied Physics
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BSIM: Berkeley short-channel IGFET model for MOS transistors
1987
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B.J. Sheu
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IEEE Journal of Solid-State Circuits
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594
A Neuron-Silicon Junction: A Retzius Cell of the Leech on an Insulated-Gate Field-Effect Transistor
1991
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Peter Fromherz
, Andreas Offenhäusser
, et al.
·
Science
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563
Two-dimensional quantum mechanical modeling of nanotransistors
2002
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A. Svizhenko
, M. P. Anantram
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Journal of Applied Physics
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458
PDF
High-Temperature Performance of Silicon Junctionless MOSFETs
2010
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Chi-Woo Lee
, Adrien Borne
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IEEE Transactions on Electron Devices
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414
Field-effect transistor with polythiophene thin film
1987
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H. Koezuka
, A. Tsumura
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Synthetic Metals
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408
Silicon surface tunnel transistor
1995
·
William M. Reddick
, Gehan A. J. Amaratunga
·
Applied Physics Letters
·
369
Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor
2004
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M. Xiao
, I. Martin
, et al.
·
Nature
·
324
The effect of high fields on MOS device and circuit performance
1984
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C.G. Sodini
, Ping-Keung Ko
, et al.
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IEEE Transactions on Electron Devices
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295
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics
2010
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M. Kanamura
, T. Ohki
, et al.
·
IEEE Electron Device Letters
·
293
Field-effect transistor biosensors with two-dimensional black phosphorus nanosheets
2016
·
Yantao Chen
, Ren Ren
, et al.
·
Biosensors and Bioelectronics
·
252
PDF
On the mobility versus drain current relation for a nanoscale MOSFET
2001
·
M.S. Lundstrom
·
IEEE Electron Device Letters
·
228
Bending experiment on pentacene field-effect transistors on plastic films
2005
·
Tsuyoshi Sekitani
, Yusaku Kato
, et al.
·
Applied Physics Letters
·
226
Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
2013
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Han Liu
, Mengwei Si
, et al.
·
Nano Letters
·
223
PDF
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
1997
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R. Gaska
, Q. Chen
, et al.
·
IEEE Electron Device Letters
·
221
Light responsive polymer field-effect transistor
2001
·
K. S. Narayan
, N. Kumar
·
Applied Physics Letters
·
217
Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
2006
·
Chang Liu
, Eng Fong Chor
, et al.
·
Applied Physics Letters
·
210
Interaction of Aromatic Compounds with Carbon Nanotubes: Correlation to the Hammett Parameter of the Substituent and Measured Carbon Nanotube FET Response
2003
·
Alexander Star
, Tzong-Ru Han
, et al.
·
Nano Letters
·
210
An analytic potential model for symmetric and asymmetric DG MOSFETs
2006
·
Huaxin Lu
, Yuan Taur
·
IEEE Transactions on Electron Devices
·
202
Field-effect transistors using alkyl substituted oligothiophenes
1991
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H. Akimichi
, K. Waragai
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Applied Physics Letters
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196
Charge Transfer from Ammonia Physisorbed on Nanotubes
2003
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Keith Bradley
, Jean-Christophe P. Gabriel
, et al.
·
Physical Review Letters
·
192
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
2018
·
Arnout Beckers
, Farzan Jazaeri
, et al.
·
IEEE Journal of the Electron Devices Society
·
184
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
2017
·
Sanjay Kumar
, Ekta Goel
, et al.
·
IEEE Transactions on Electron Devices
·
184
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Works count:
4,547
Citation count:
50,970
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