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Keyword

failure current

Description: Failure current is the electrical current associated with device breakdown or failure, particularly in electrostatic-discharge protection and semiconductor reliability testing.
OpenAlex ID: keywords/failure-current
Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications
2008 · Zhiwei Liu, Juin J. Liou, et al. · IEEE Electron Device Letters · 92
A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology
2016 · Xiaozong Huang, Juin J. Liou, et al. · IEEE Electron Device Letters · 79
Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications
2010 · Zhiwei Liu, Juin J Liou, et al. · IEEE Electron Device Letters · 71
Electric thermal energy storage and advantage of rotating heater having synchronous inertia
2019 · Toru Okazaki · Renewable Energy · 65
High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered Technique
2013 · Fei Ma, Bin Zhang, et al. · IEEE Electron Device Letters · 61
Hybrid DC Circuit Breaker Feasibility Study
2016 · Dirk Bösche, Ernst-Dieter Wilkening, et al. · IEEE Transactions on Components Packaging and Manufacturing Technology · 60
Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies
2007 · James Di Sarro, Kiran Chatty, et al. · IEEE International Reliability Physics Symposium proceedings · 41
ESD Protection Design With Stacked High-Holding-Voltage SCR for High-Voltage Pins in a Battery-Monitoring IC
2016 · Chia-Tsen Dai, Ming-Dou Ker · IEEE Transactions on Electron Devices · 39
A High Failure-Current Gate-Controlled Dual-Direction SCR for High-Voltage ESD Protection in 0.18-μm BCD Technology
2019 · Yang Wang, Xiangliang Jin, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 29
On the progressive breakdown statistical distribution and its voltage acceleration
2007 · Ernest Wu, Santi Tous, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
Robust Silicon-Controlled Rectifier With High-Holding Voltage for On-Chip Electrostatic Protection
2021 · Wenqiang Song, Ruibo Chen, et al. · IEEE Transactions on Electron Devices · 23
Analysis of 65 nm technology grounded-gate NMOS for on-chip ESD protection applications
2008 · S. Dong, X. Du, et al. · Electronics Letters · 22
Electrical Overstress Failure Modeling for Bipolar Semiconductor Components
1978 · D. Alexander · IEEE Transactions on Components Hybrids and Manufacturing Technology · 22
Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited
2018 · Milova Paul, Christian Russ, et al. · IEEE Transactions on Electron Devices · 20
Process and design optimization of a protection scheme based on NMOSFETs with ESD implant in 65nm and 45nm CMOS technologies
2007 · K. Chatty, D. Alvarez, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 20
Study of factors limiting ESD diode performance in 90nm CMOS technologies and beyond
2005 · K. Chatty, R. Gauthier, et al. · IEEE International Reliability Physics Symposium proceedings · 20
A Novel Segmented LDMOS-SCR Structure With 8-kV HBM ESD Robustness in CMOS Analog Multiplexer
2022 · Lingli Qian, Mingyu Li, et al. · IEEE Transactions on Electron Devices · 19
ESD-Protected 24 GHz LNA for Radar Applications in SiGe:C Technology
2009 · Vadim Issakov, Herbert Knapp, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 19
Electrostatic Discharge Robustness of Si Nanowire Field-Effect Transistors
2009 · Wen Liu, J.J. Liou, et al. · IEEE Electron Device Letters · 18
Investigating the CDM susceptibility of IC’s at package and wafer level by capacitive coupled TLP
2007 · Heinrich Wolf, Horst Gieser, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 18
Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs
2022 · Yajie Xin, Wanjun Chen, et al. · IEEE Electron Device Letters · 17
Breaking performance investigation of hybrid DC circuit breakers: An experimental approach
2015 · Dirk Bösche, Ernst-Dieter Wilkening, et al. · IEEE Holm Conference on Electrical Contacts (HOLM) · 17
A Novel Gate-Controlled Dual Direction SCR With Enhanced Failure Current for On-Chip ESD Protection of Industry-Level Controller Area Network Bus
2022 · Yang Wang, Zeyu Zhong, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 16
TCAD Methodology for ESD Robustness Prediction of Smart Power ESD Devices
2006 · C. Salamero, N. Nolhier, et al. · IEEE Transactions on Device and Materials Reliability · 16
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A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection
2023 · Hailian Liang, Xiyue Cao, et al. · IEEE Transactions on Electron Devices · 15
Works count: 171
Citation count: 1,338
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