Keyword

GaN

Description: Gallium nitride is a III–V semiconductor compound used in electronic, optoelectronic, and materials-science applications.

Primary topic: GaN-based semiconductor devices and materials (68%)

Wikidata ID: wiki/Q411713

OpenAlex ID: keywords/gan

Band parameters for III–V compound semiconductors and their alloys

2001 · I. Vurgaftman, J. R. Meyer, et al. · Journal of Applied Physics · 7,390

First-principles calculations for defects and impurities: Applications to III-nitrides

2004 · Chris G. Van de Walle, Jörg Neugebauer · Journal of Applied Physics · 3,257

Spontaneous polarization and piezoelectric constants of III-V nitrides

1997 · Fabio Bernardini, Vincenzo Fiorentini, et al. · Physical review. B, Condensed matter · 3,131

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GaN, AlN, and InN: A review

1992 · S. Strite, H. Morkoç · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2,841

Band parameters for nitrogen-containing semiconductors

2003 · I. Vurgaftman, J. R. Meyer · Journal of Applied Physics · 2,816

GaN: Processing, defects, and devices

1999 · S. J. Pearton, J. C. Zolper, et al. · Journal of Applied Physics · 1,815

Transfer printing by kinetic control of adhesion to an elastomeric stamp

2005 · Matthew A. Meitl, Zheng-Tao Zhu, et al. · Nature Materials · 1,550

Growth and applications of Group III-nitrides

1998 · O Ambacher · Journal of Physics D Applied Physics · 1,476

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Principles of Power Electronics

2023 · John G. Kassakian, David J. Perreault, et al. · Cambridge University Press eBooks · 1,394

III–nitrides: Growth, characterization, and properties

2000 · S. C. Jain, M. Willander, et al. · Journal of Applied Physics · 1,260

Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems

2001 · A. D. Yoffe · Advances In Physics · 1,255

Gallium vacancies and the yellow luminescence in GaN

1996 · Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1,140

X-ray diffraction of III-nitrides

2009 · M A Moram, M E Vickers · Reports on Progress in Physics · 1,099

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Wide band gap ferromagnetic semiconductors and oxides

2002 · S. J. Pearton, C. R. Abernathy, et al. · Journal of Applied Physics · 1,025

Self-consistent G W calculations for semiconductors and insulators

2007 · M. Shishkin, G. Kresse · Physical Review B · 969

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

1997 · Akira Usui, Haruo Sunakawa, et al. · Japanese Journal of Applied Physics · 929

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Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics

2010 · Zhong Lin Wang · Nano Today · 886

Stability of the wurtzite-type structure under high pressure: GaN and InN

1994 · Masaki Ueno, Minoru Yoshida, et al. · Physical review. B, Condensed matter · 876

First principles materials design for semiconductor spintronics

2002 · K Sato, H Katayama-Yoshida · Semiconductor Science and Technology · 846

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Wet etching of GaN, AlN, and SiC: a review

2005 · D. Zhuang, J.H. Edgar · Materials Science and Engineering R Reports · 811

Fundamental energy gap of GaN from photoluminescence excitation spectra

1974 · B. Monemar · Physical review. B, Solid state · 807

Atomic geometry and electronic structure of native defects in GaN

1994 · Jörg Neugebauer, Chris G. Van de Walle · Physical review. B, Condensed matter · 786

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

1997 · J. F. Muth, J. H. Lee, et al. · Applied Physics Letters · 758

Electronic, optical, and structural properties of some wurtzite crystals

1993 · Yong-Nian Xu, W. Y. Ching · Physical review. B, Condensed matter · 753

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

2009 · Jonathan J. Wierer, Aurelien David, et al. · Nature Photonics · 737

Works count: 19,360

Citation count: 324,600