Keyword

InGaN

Description: Indium gallium nitride, a III–V semiconductor alloy used in optoelectronic materials and devices.

Primary topic: GaN-based semiconductor devices and materials (86%)

Wikidata ID: wiki/Q425734

OpenAlex ID: keywords/ingan

The Blue Laser Diode: GaN based Light Emitters and Lasers

1997 · Shuji Nakamura, Gerhard Fasol · CERN Document Server (European Organization for Nuclear Research) · 3,485

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

1996 · Shuji Nakamura, Masayuki Senoh, et al. · Japanese Journal of Applied Physics · 2,502

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The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

1998 · Shuji Nakamura · Science · 1,874

III–nitrides: Growth, characterization, and properties

2000 · S. C. Jain, M. Willander, et al. · Journal of Applied Physics · 1,260

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

1996 · S. Chichibu, T. Azuhata, et al. · Applied Physics Letters · 1,219

Auger recombination in InGaN measured by photoluminescence

2007 · Y. C. Shen, G. O. Mueller, et al. · Applied Physics Letters · 1,112

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

1995 · Shuji Nakamura, Masayuki Senoh, et al. · Japanese Journal of Applied Physics · 1,095

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Plasmonic Nanolaser Using Epitaxially Grown Silver Film

2012 · Yu-Jung Lu, Jisun Kim, et al. · Science · 760

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

2009 · Jonathan J. Wierer, Aurelien David, et al. · Nature Photonics · 737

Strain-induced polarization in wurtzite III-nitride semipolar layers

2006 · A. E. Romanov, T. J. Baker, et al. · Journal of Applied Physics · 718

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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

2006 · Shigefusa F. Chichibu, Akira Uedono, et al. · Nature Materials · 702

Properties of GaN and related compounds studied by means of Raman scattering

2002 · Hiroshi Harima · Journal of Physics Condensed Matter · 699

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Emerging gallium nitride based devices

1995 · S.N. Mohammad, A.A. Salvador, et al. · Proceedings of the IEEE · 615

High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

1995 · Shuji Nakamura, Masayuki Senoh, et al. · Applied Physics Letters · 601

P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

1993 · Shuji Nakamura, Masayuki Senoh Masayuki Senoh, et al. · Japanese Journal of Applied Physics · 594

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Design and characterization of GaN∕InGaN solar cells

2007 · Omkar Jani, Ian Ferguson, et al. · Applied Physics Letters · 569

High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

2004 · Hwa-Mok Kim, Yong-Hoon Cho, et al. · Nano Letters · 565

“Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

1997 · Petr G. Eliseev, Piotr Perlin, et al. · Applied Physics Letters · 547

Group III nitride semiconductors for short wavelength light-emitting devices

1998 · J W Orton, C T Foxon · Reports on Progress in Physics · 513

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

2011 · Emmanouil Kioupakis, Patrick Rinke, et al. · Applied Physics Letters · 497

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

2001 · M. Farahmand, C. Garetto, et al. · IEEE Transactions on Electron Devices · 490

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

1997 · R. Singh, D. Doppalapudi, et al. · Applied Physics Letters · 488

White-light generation through ultraviolet-emitting diode and white-emitting phosphor

2004 · Jong Su Kim, Pyung Eun Jeon, et al. · Applied Physics Letters · 468

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

2003 · Yasushi Nanishi, Yoshiki Saito, et al. · Japanese Journal of Applied Physics · 422

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White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties

2003 · Joung Kyu Park, Mi Ae Lim, et al. · Applied Physics Letters · 409

Works count: 4,900

Citation count: 76,960