Keyword

interface state density

Description: Interface state density is the number of electronic energy states per unit area and energy at a boundary, especially in semiconductor devices.

Primary topic: Semiconductor materials and devices (49%)

OpenAlex ID: keywords/interface-state-density

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

1994 · H. Morkoç, S. Strite, et al. · Journal of Applied Physics · 2,733

A reliable approach to charge-pumping measurements in MOS transistors

1984 · G. Groeseneken, H.E. Maes, et al. · IEEE Transactions on Electron Devices · 1,355

Hafnium and zirconium silicates for advanced gate dielectrics

2000 · G. D. Wilk, R. M. Wallace, et al. · Journal of Applied Physics · 974

Bonding of silicon wafers for silicon-on-insulator

1988 · W. P. Maszara, G. Goetz, et al. · Journal of Applied Physics · 876

A single-frequency approximation for interface-state density determination

1980 · W.A. Hill, C.C. Coleman · Solid-State Electronics · 735

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

1971 · R. Castagné, A. Vapaille · Surface Science · 538

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

1999 · G. D. Wilk, R. M. Wallace · Applied Physics Letters · 504

Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

1986 · Hideki Hasegawa, Hideo Ohno · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 494

Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interface

1992 · Armin G. Aberle, Stefan Glunz, et al. · Journal of Applied Physics · 454

DENSITY OF SiO2–Si INTERFACE STATES

1966 · Peter V. Gray, Dale M. Brown · Applied Physics Letters · 408

Interface state recombination in organic solar cells

2010 · R. A. Street, M. Schoendorf, et al. · Physical Review B · 404

Low‐Temperature Surface Passivation of Silicon for Solar Cells

1989 · R. Hezel, K. Jaeger · Journal of The Electrochemical Society · 338

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

1997 · Hui-feng Li, Sima Dimitrijev, et al. · Applied Physics Letters · 322

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

2010 · Dai Okamoto, Hiroshi Yano, et al. · IEEE Electron Device Letters · 308

Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

1979 · Kimiyoshi Yamasaki, Minoru Yoshida, et al. · Japanese Journal of Applied Physics · 295

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

2007 · Annelies Delabie, Florence Bellenger, et al. · Applied Physics Letters · 269

Electronic and chemical properties of the c-Si/Al2O3 interface

2011 · Florian Werner, Boris Veith, et al. · Journal of Applied Physics · 253

Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing

1989 · T. Hori, H. Iwasaki, et al. · IEEE Transactions on Electron Devices · 253

Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors

1991 · Haruhiro Oigawa, Jia-Fa Fan, et al. · Japanese Journal of Applied Physics · 250

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

2001 · M. T. Currie, C. W. Leitz, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 248

Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes

1993 · P. Chattopadhyay, B. RayChaudhuri · Solid-State Electronics · 243

Improved oxidation procedures for reduced SiO2/SiC defects

1996 · L. A. Lipkin, J. W. Palmour · Journal of Electronic Materials · 238

Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables

1979 · Reda R. Razouk, Bruce E. Deal · Journal of The Electrochemical Society · 237

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Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics

1989 · G. S. Higashi, C. G. Fleming · Applied Physics Letters · 234

Interface Bonds Determined Gas-Sensing of SnO2–SnS2 Hybrids to Ammonia at Room Temperature

2015 · Keng Xu, Neng Li, et al. · ACS Applied Materials & Interfaces · 227

Works count: 5,304

Citation count: 87,900