Keyword

interface states

Description: Interface states are electronic or quantum states localized at boundaries between materials or regions, studied in condensed matter physics and semiconductor devices.

Primary topic: Semiconductor materials and devices (31%)

OpenAlex ID: keywords/interface-states

MOS /metal oxide semiconductor/ physics and technology

1982 · E. H. Nicollian, J.R. Brews · CERN Document Server (European Organization for Nuclear Research) · 2,099

Present status of amorphous In–Ga–Zn–O thin-film transistors

2010 · Toshio Kamiya, Kenji Nomura, et al. · Science and Technology of Advanced Materials · 1,964

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The Si-SiO 2 Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

1967 · E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1,863

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

1971 · H C Card, E H Rhoderick · Journal of Physics D Applied Physics · 1,806

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Nanostructured materials for photon detection

2010 · Gerasimos Konstantatos, Edward H. Sargent · Nature Nanotechnology · 1,461

Recombination in Perovskite Solar Cells: Significance of Grain Boundaries, Interface Traps, and Defect Ions

2017 · Tejas S. Sherkar, Cristina Momblona, et al. · ACS Energy Letters · 1,285

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

1989 · M.J. Kirton, M.J. Uren · Advances In Physics · 1,281

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

1985 · Chenming Hu, Simon C. Tam, et al. · IEEE Transactions on Electron Devices · 1,157

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

2003 · Dieter K. Schroder, Jeff A. Babcock · Journal of Applied Physics · 1,052

New and unified model for Schottky barrier and III–V insulator interface states formation

1979 · W. E. Spicer, P. W. Chye, et al. · Journal of Vacuum Science and Technology · 933

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

2009 · Volker Schmidt, Joerg V. Wittemann, et al. · Advanced Materials · 810

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

1986 · P. J. McWhorter, P. S. Winokur · Applied Physics Letters · 793

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

2001 · M. L. Green, E. P. Gusev, et al. · Journal of Applied Physics · 780

Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

2004 · A. Sawa, T. Fujii, et al. · Applied Physics Letters · 747

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A single-frequency approximation for interface-state density determination

1980 · W.A. Hill, C.C. Coleman · Solid-State Electronics · 735

Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1f ?) Noise

1984 · K. S. Ralls, W. J. Skocpol, et al. · Physical Review Letters · 715

Transport properties of polycrystalline silicon films

1978 · G. Baccarani, B. Riccò, et al. · Journal of Applied Physics · 699

Electron and hole relaxation pathways in semiconductor quantum dots

1999 · V. I. Klimov, D. W. McBranch, et al. · Physical review. B, Condensed matter · 685

Intrinsic SiC/SiO2 Interface States

1997 · V. V. Afanasev, M. Bassler, et al. · physica status solidi (a) · 652

Trap creation in silicon dioxide produced by hot electrons

1989 · D. J. DiMaria, J. W. Stasiak · Journal of Applied Physics · 618

Fermi-level pinning and charge neutrality level in germanium

2006 · A. Dimoulas, P. Tsipas, et al. · Applied Physics Letters · 605

Effect of a Cobalt-Based Oxygen Evolution Catalyst on the Stability and the Selectivity of Photo-Oxidation Reactions of a WO3 Photoanode

2011 · Jason A. Seabold, Kyoung-Shin Choi · Chemistry of Materials · 600

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

2009 · Sara A. DiBenedetto, Antonio Facchetti, et al. · Advanced Materials · 600

Nature and Light Dependence of Bulk Recombination in Co-Pi-Catalyzed BiVO 4 Photoanodes

2012 · Fatwa F. Abdi, Roel van de Krol · The Journal of Physical Chemistry C · 573

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

2008 · Jeong-Min Lee, In-Tak Cho, et al. · Applied Physics Letters · 563

Works count: 15,480

Citation count: 253,300