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Keyword

interface trap density

Description: The number of electrically active defect states per unit energy and area at a semiconductor–insulator boundary in electronic devices.
OpenAlex ID: keywords/interface-trap-density
Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells
2020 · Zhenyi Ni, Chunxiong Bao, et al. · Science · 1,322
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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
2001 · G.Y. Chung, C.C. Tin, et al. · IEEE Electron Device Letters · 640
Charge transfer rates and electron trapping at buried interfaces of perovskite solar cells
2021 · Igal Levine, Amran Al-Ashouri, et al. · Joule · 464
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Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
2000 · G. Y. Chung, C. C. Tin, et al. · Applied Physics Letters · 437
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
2010 · Roman Engel-Herbert, Yoontae Hwang, et al. · Journal of Applied Physics · 429
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High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
2007 · Jae Kyeong Jeong, Jong Han Jeong, et al. · Applied Physics Letters · 394
Bandlike Transport in Strongly Coupled and Doped Quantum Dot Solids: A Route to High-Performance Thin-Film Electronics
2012 · Ji-Hyuk Choi, Aaron T. Fafarman, et al. · Nano Letters · 381
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
2006 · Hei Wong, Hiroshi Iwai · Microelectronic Engineering · 368
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
2008 · Koen Martens, Chi On Chui, et al. · IEEE Transactions on Electron Devices · 364
Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
2008 · Hiroshi Matsubara, Takashi Sasada, et al. · Applied Physics Letters · 308
Field effect transistors with SrTiO3 gate dielectric on Si
2000 · K. Eisenbeiser, J. M. Finder, et al. · Applied Physics Letters · 297
Chemistry of Si-SiO2 interface trap annealing
1988 · Michael L. Reed, James D. Plummer · Journal of Applied Physics · 297
Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation
2014 · Junhong Na, Young Tack Lee, et al. · ACS Nano · 290
Field-effect passivation of the SiO2Si interface
1999 · S. W. Glunz, D. Biro, et al. · Journal of Applied Physics · 275
High‐Performance Monolayer WS 2 Field‐Effect Transistors on High‐κ Dielectrics
2015 · Yang Cui, Run Xin, et al. · Advanced Materials · 273
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Surface voltage and surface photovoltage: history, theory and applications
2001 · Dieter K Schroder · Measurement Science and Technology · 260
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Dielectric property and thermal stability of HfO2 on silicon
2002 · Y.-S. Lin, R. Puthenkovilakam, et al. · Applied Physics Letters · 244
Electrical characterization of 2D materials-based field-effect transistors
2020 · Sekhar Babu Mitta, Min Sup Choi, et al. · 2D Materials · 236
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The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
1990 · J.R. Pfiester, F.K. Baker, et al. · IEEE Transactions on Electron Devices · 211
Electrical characteristics of high quality La 2 O 3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
2000 · Y.H. Wu, M.Y. Yang, et al. · IEEE Electron Device Letters · 209
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
2013 · Gang He, Xiaoshuang Chen, et al. · Surface Science Reports · 208
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
2000 · J. Kolodzey, E.A. Chowdhury, et al. · IEEE Transactions on Electron Devices · 208
Physical model for enhanced interface-trap formation at low dose rates
2002 · S.N. Rashkeev, C.R. Cirba, et al. · IEEE Transactions on Nuclear Science · 202
Interface-trap generation at ultrathin SiO2 (4–6 nm)-Si interfaces during negative-bias temperature aging
1995 · Shigeo Ogawa, Masakazu Shimaya, et al. · Journal of Applied Physics · 200
Low‐Voltage Organic Thin‐Film Transistors with High‐k Nanocomposite Gate Dielectrics for Flexible Electronics and Optothermal Sensors
2007 · M. Zirkl, A. Haase, et al. · Advanced Materials · 196
Works count: 4,037
Citation count: 61,580
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