Keyword

latch-up

Description: Latch-up is a parasitic short-circuit condition in CMOS and other integrated circuits that can cause excessive current flow.

Primary topic: Electrostatic Discharge in Electronics (37%)

Wikidata ID: wiki/Q491282

OpenAlex ID: keywords/latch-up

Single-event effects in avionics

1996 · E. Normand · IEEE Transactions on Nuclear Science · 421

Comparison of Current-Limiting Strategies During Fault Ride-Through of Inverters to Prevent Latch-Up and Wind-Up

2013 · Nathaniel Bottrell, Timothy C. Green · IEEE Transactions on Power Electronics · 312

Fully integrated wideband high-current rectifiers for inductively powered devices

2004 · M. Ghovanloo, K. Najafi · IEEE Journal of Solid-State Circuits · 296

Latchup in CMOS Technology

1986 · Ronald R. Troutman · Springer eBooks · 279

Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits

2005 · Ming-Dou Ker, K.-C. Hsu · IEEE Transactions on Device and Materials Reliability · 251

Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's

1991 · J.-Y. Choi, J.G. Fossum · IEEE Transactions on Electron Devices · 250

Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

2009 · N. Patil, J. Celaya, et al. · IEEE Transactions on Reliability · 222

Insulated Gate Bipolar Transistor IGBT Theory and Design

2003 · Vinod Kumar Khanna · Wiley eBooks · 196

The influence of VLSI technology evolution on radiation-induced latchup in space systems

1996 · A.H. Johnston · IEEE Transactions on Nuclear Science · 154

Radiation effects in advanced microelectronics technologies

1998 · A.H. Johnston · IEEE Transactions on Nuclear Science · 137

Latchup in CMOS Technology: The Problem and Its Cure

1986 · R.R. Troutman · Medical Entomology and Zoology · 135

Deep trench isolated CMOS devices

1982 · R.D. Rung, H. Momose, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 126

Single-event effects in SOI technologies and devices

1996 · O. Musseau · IEEE Transactions on Nuclear Science · 124

Latchup

2007 · Steven H. Voldman · Wiley eBooks · 122

ESD: Circuits and Devices

2005 · Steven H. Voldman · 122

Latch-Up in CMOS Integrated Circuits

1973 · B. L. Gregory, B. D. Shafer · IEEE Transactions on Nuclear Science · 122

Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer Memories

1979 · W. A. Kolasinski, J. B. Blake, et al. · IEEE Transactions on Nuclear Science · 117

Radiation effects on semiconductor devices

1974 · B.L. Gregory, C.W. Gwyn · Proceedings of the IEEE · 112

Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures

1995 · S.C. Moss, S.D. LaLumondiere, et al. · IEEE Transactions on Nuclear Science · 110

Silicon on Insulator

2003 · S. Cristoloveanu, F. Balestra · Elsevier eBooks · 107

The physics and modeling of latch-up and CMOS integrated circuits

1980 · D.B. Estreich · 100

Latchup in integrated circuits from energetic protons

1997 · A.H. Johnston, G.M. Swift, et al. · IEEE Transactions on Nuclear Science · 93

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

2008 · R. Harboe-Sorensen, C. Poivey, et al. · IEEE Transactions on Nuclear Science · 92

Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications

2008 · Zhiwei Liu, Juin J. Liou, et al. · IEEE Electron Device Letters · 92

CMOS Electronics: How It Works, How It Fails

2004 · J. Segura, C.F. Hawkins · CERN Document Server (European Organization for Nuclear Research) · 91

Works count: 1,947

Citation count: 16,560