Keyword

memory window

Description: The voltage range separating distinct resistance or polarization states in a nonvolatile memory device, indicating its readout margin.

Primary topic: Ferroelectric and Negative Capacitance Devices (33%)

OpenAlex ID: keywords/memory-window

A ferroelectric semiconductor field-effect transistor

2019 · Mengwei Si, Atanu K. Saha, et al. · Nature Electronics · 652

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A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

2017 · S. Dunkel, M. Trentzsch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 540

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

2018 · Kai Ni, Pankaj Sharma, et al. · IEEE Transactions on Electron Devices · 450

Tunable Charge-Trap Memory Based on Few-Layer MoS2

2014 · Enze Zhang, Weiyi Wang, et al. · ACS Nano · 288

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Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG

2012 · J. Muller, E. Yurchuk, et al. · Symposium on VLSI Technology · 288

Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory

2008 · Kang‐Jun Baeg, Yong‐Young Noh, et al. · Advanced Functional Materials · 284

Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory

2009 · Kang‐Jun Baeg, Yong‐Young Noh, et al. · Advanced Functional Materials · 283

Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

2007 · Jang-Sik Lee, Jang-Sik Lee, et al. · Nature Nanotechnology · 265

Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance

2010 · H. Y. Lee, Y. S. Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 264

Semiconductor Science and Technology

2013 · Semiconductor Science and Technology · 263

Graphene Flash Memory

2011 · Augustin J. Hong, Emil B. Song, et al. · ACS Nano · 255

A Circuit Compatible Accurate Compact Model for Ferroelectric-FETs

2018 · Kai Ni, Matthew Jerry, et al. · IEEE Symposium on VLSI Technology · 251

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

2023 · Kwan-Ho Kim, Seyong Oh, et al. · Nature Nanotechnology · 221

Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition

1999 · M. Joseph, H. Tabata, et al. · Applied Physics Letters · 216

Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

2021 · Ava Jiang Tan, Yu-Hung Liao, et al. · IEEE Electron Device Letters · 204

Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites

2018 · Yi Ren, Jia‐Qin Yang, et al. · Advanced Functional Materials · 203

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

2015 · Daniele Garbin, Elisa Vianello, et al. · IEEE Transactions on Electron Devices · 202

Non‐Volatile Organic Memory Applications Enabled by In Situ Synthesis of Gold Nanoparticles in a Self‐Assembled Block Copolymer

2008 · Wei Lin Leong, Pooi See Lee, et al. · Advanced Materials · 198

Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications

2005 · Chungho Lee, Jami Meteer, et al. · Journal of Electronic Materials · 195

Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

2007 · Sumiko Fujisaki, Hiroshi Ishiwara, et al. · Applied Physics Letters · 187

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

2021 · Xiwen Liu, Dixiong Wang, et al. · Nano Letters · 185

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Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

2015 · Chien‐Chung Shih, Yu‐Cheng Chiu, et al. · Advanced Functional Materials · 164

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

2014 · Ekaterina Yurchuk, Johannes Muller, et al. · IEEE Transactions on Electron Devices · 163

Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

2018 · K. Florent, M. Pesic, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 162

Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance

2019 · Halid Mulaosmanovic, Evelyn T. Breyer, et al. · IEEE Transactions on Electron Devices · 161

Works count: 3,077

Citation count: 44,760