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Keyword

MOS structures

Description: Metal-oxide-semiconductor structures are electronic device configurations in which a metal gate and semiconductor are separated by an insulating oxide.
OpenAlex ID: keywords/mos-structures
Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
1967 · B. E. Deal, M. Sklar, et al. · Journal of The Electrochemical Society · 721
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Surface states at steam-grown silicon-silicon dioxide interfaces
1966 · C.N. Berglund · IEEE Transactions on Electron Devices · 678
Fermi-level pinning and charge neutrality level in germanium
2006 · A. Dimoulas, P. Tsipas, et al. · Applied Physics Letters · 605
Diffusion of Metals in Silicon Dioxide
1986 · J. D. McBrayer, R. M. Swanson, et al. · Journal of The Electrochemical Society · 543
Hydrogen sensitive mos-structures
1981 · Ingemar Lundström · Sensors and Actuators · 419
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
1965 · A.S. Grove, B.E. Deal, et al. · Solid-State Electronics · 416
Mos Conductance Technique for Measuring Surface State Parameters
1965 · E. H. Nicollian, A. Goetzberger · Applied Physics Letters · 371
Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
2008 · Hiroshi Matsubara, Takashi Sasada, et al. · Applied Physics Letters · 308
Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
1986 · T. R. Oldham, A. J. Lelis, et al. · IEEE Transactions on Nuclear Science · 273
Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
1995 · M Depas, B Vermeire, et al. · Solid-State Electronics · 265
Electroluminescence of silicon nanocrystals in MOS structures
2002 · G. Franzò, A. Irrera, et al. · Applied Physics A · 256
Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si
1972 · S. Kar, W.E. Dahlke · Solid-State Electronics · 244
Electron states in narrow gate-induced channels in Si
1986 · Steven E. Laux, Frank Stern · Applied Physics Letters · 231
Trap generation and occupation dynamics in SiO2 under charge injection stress
1986 · Y. Nissan-Cohen, J. Shappir, et al. · Journal of Applied Physics · 209
Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structures
1976 · D. J. DiMaria · Journal of Applied Physics · 201
Studies on optical and dielectric properties of Al2O3 thin films prepared by electron beam evaporation and spray pyrolysis method
2003 · K.S. Shamala, L.C.S. Murthy, et al. · Materials Science and Engineering B · 190
Vacuum Ultraviolet Radiation Effects in SiO2
1971 · R. J. Powell, G. F. Derbenwick · IEEE Transactions on Nuclear Science · 182
The Physics of MOS Insulators
1980 · Elsevier eBooks · 180
Metal oxide semiconductor-based Schottky diodes: a review of recent advances
2020 · Noorah A Al-Ahmadi · Materials Research Express · 178
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Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressing
1977 · D. J. DiMaria, Z. A. Weinberg, et al. · Journal of Applied Physics · 167
On the role of scattering by surface roughness in silicon inversion layers
1973 · Y.C. Cheng, E.A. Sullivan · Surface Science · 164
Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
2000 · K. Fukuda, S. Suzuki, et al. · Applied Physics Letters · 162
An overview of radiation-induced interface traps in MOS structures
1989 · T R Oldham, F B McLean, et al. · Semiconductor Science and Technology · 150
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Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
1969 · B. E. Deal, E. L. MacKenna, et al. · Journal of The Electrochemical Society · 149
Conducting atomic force microscopy study of silicon dioxide breakdown
1995 · S. J. O’Shea, R. M. Atta, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 148
Works count: 3,906
Citation count: 39,170
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