Keyword

non-volatile memory

Description: This is computer memory that preserves stored information without continuous electrical power, used in data storage and electronic devices.

Primary topic: Advanced Memory and Neural Computing (30%)

Wikidata ID: wiki/Q10997658

OpenAlex ID: keywords/non-volatile-memory

Spintronics: A Spin-Based Electronics Vision for the Future

2001 · S. A. Wolf, D. D. Awschalom, et al. · Science · 11,452

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

2009 · Rainer Waser, Regina Dittmann, et al. · Advanced Materials · 5,081

Nanoionics-based resistive switching memories

2007 · Rainer Waser, Masakazu Aono · Nature Materials · 4,913

Magnetic Domain-Wall Racetrack Memory

2008 · Stuart S. P. Parkin, Masamitsu Hayashi, et al. · Science · 4,639

Ferroelectric Memories

1989 · James F. Scott, Carlos A. Paz de Araujo · Science · 3,865

Phase-change materials for rewriteable data storage

2007 · Matthias Wuttig, Noboru Yamada · Nature Materials · 3,656

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

2010 · S. Ikeda, K. Miura, et al. · Nature Materials · 3,625

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2011 · Ioan Mihai Miron, Kevin Garello, et al. · Nature · 2,992

Memristive switching mechanism for metal/oxide/metal nanodevices

2008 · J. Joshua Yang, Matthew D. Pickett, et al. · Nature Nanotechnology · 2,986

Resistive switching in transition metal oxides

2008 · Akihito Sawa · Materials Today · 2,950

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Metal–Oxide RRAM

2012 · H.-S. Philip Wong, Heng-Yuan Lee, et al. · Proceedings of the IEEE · 2,751

Fatigue-free ferroelectric capacitors with platinum electrodes

1995 · C. A-Paz de Araujo, J. D. Cuchiaro, et al. · Nature · 2,624

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2011 · Myoung-Jae Lee, Chang Bum Lee, et al. · Nature Materials · 2,226

Lanthanum-substituted bismuth titanate for use in non-volatile memories

1999 · B. H. Park, B. S. Kang, et al. · Nature · 2,205

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

2010 · Deok-Hwang Kwon, Kyung Min Kim, et al. · Nature Nanotechnology · 2,091

Band offsets of wide-band-gap oxides and implications for future electronic devices

2000 · John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2,052

Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

2004 · K. J. Choi, M. Biegalski, et al. · Science · 1,961

A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

2017 · Yoeri van de Burgt, Ewout Lubberman, et al. · Nature Materials · 1,860

A silicon nanocrystals based memory

1996 · Sandip Tiwari, Farhan Rana, et al. · Applied Physics Letters · 1,630

Multifunctional wearable devices for diagnosis and therapy of movement disorders

2014 · Donghee Son, Jongha Lee, et al. · Nature Nanotechnology · 1,459

Resistance switching memories are memristors

2011 · Leon Chua · Applied Physics A · 1,435

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Ferroelectric Memories