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Keyword

strained silicon

Description: Strained silicon is silicon whose crystal lattice is deliberately deformed to alter its electronic and optical properties in semiconductor devices.
Wikidata ID: wiki/Q772250
OpenAlex ID: keywords/strained-silicon
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2007 · K. Mistry, R. Chau, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 854
A 90-nm logic technology featuring strained-silicon
2004 · S.E. Thompson, M. Armstrong, et al. · IEEE Transactions on Electron Devices · 671
Strained silicon as a new electro-optic material
2006 · Rune S. Jacobsen, Karin N. Andersen, et al. · Nature · 663
Uniaxial-process-induced strained-Si: extending the CMOS roadmap
2006 · S.E. Thompson, Guangyu Sun, et al. · IEEE Transactions on Electron Devices · 584
A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size
2014 · S. Natarajan, M. Agostinelli, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 543
A Logic Nanotechnology Featuring Strained-Silicon
2004 · S.E. Thompson, M. Armstrong, et al. · IEEE Electron Device Letters · 518
Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors
1996 · Shin-ichi Takagi, Judy L. Hoyt, et al. · Journal of Applied Physics · 464
Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials
1963 · J. C. Hensel, G. Feher · Physical Review · 464
Nanoscale holographic interferometry for strain measurements in electronic devices
2008 · Martin Hÿtch, Florent Houdellier, et al. · Nature · 461
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
1994 · J. Welser, J.L. Hoyt, et al. · IEEE Electron Device Letters · 388
A 10nm high performance and low-power CMOS technology featuring 3 rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects
2017 · C. Auth, A. Aliyarukunju, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 384
Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
2009 · Min Chu, Yongke Sun, et al. · Annual Review of Materials Research · 377
Fabrication and analysis of deep submicron strained-Si n-MOSFET's
2000 · K. Rim, J.L. Hoyt, et al. · IEEE Transactions on Electron Devices · 359
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
2001 · T. Tezuka, N. Sugiyama, et al. · Applied Physics Letters · 293
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
2009 · Ali Khakifirooz, Osama M. Nayfeh, et al. · IEEE Transactions on Electron Devices · 268
Elastically relaxed free-standing strained-silicon nanomembranes
2006 · Michelle M. Roberts, Levente J. Klein, et al. · Nature Materials · 262
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Strained silicon MOSFET technology
2003 · J.L. Hoyt, H.M. Nayfeh, et al. · 258
Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Layers
2005 · Wenjun Liu, Mehdi Asheghi · ASME Journal of Heat and Mass Transfer · 257
Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
2008 · Osama M. Nayfeh, Cait Ni Chleirigh, et al. · IEEE Electron Device Letters · 250
A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell
2003 · S. Thompson, N. Anand, et al. · 244
Identification of strained silicon layers at Si- SiO2 interfaces and clean Si surfaces by nonlinear optical spectroscopy
1993 · W. Daum, H.-J. Krause, et al. · Physical Review Letters · 237
On the enhanced electron mobility in strained-silicon inversion layers
2002 · M. V. Fischetti, F. Gámiz, et al. · Journal of Applied Physics · 231
Theory of Cyclotron Resonance in Strained Silicon Crystals
1963 · Hiroshi Hasegawa · Physical Review · 211
Recent progress with large‐scale ab initio calculations: the CONQUEST code
2006 · D. R. Bowler, R. Choudhury, et al. · physica status solidi (b) · 206
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Robust multi-qubit quantum network node with integrated error detection
2022 · P.-J. Stas, Y. Q. Huan, et al. · Science · 202
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Works count: 3,109
Citation count: 35,250
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