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TCAD simulation
Description:
TCAD simulation computationally models semiconductor device structures and processes to predict electrical behavior, reliability, and radiation effects.
Primary topic:
Advancements in Semiconductor Devices and Circuit Design (25%)
Related topics:
Advancements in Semiconductor Devices and Circuit Design (25%),
Radiation Effects in Electronics (10%),
Silicon Carbide Semiconductor Technologies (10%),
GaN-based semiconductor devices and materials (9%)
OpenAlex ID:
keywords/tcad-simulation
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
2011
·
Kuo-Hsing Kao
, Anne S. Verhulst
, et al.
·
IEEE Transactions on Electron Devices
·
475
Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems *
2021
·
Kaikai Xu
·
Journal of Micromechanics and Microengineering
·
428
Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET
2015
·
S.K. Mohapatra
, K.P. Pradhan
, et al.
·
Materials Science in Semiconductor Processing
·
330
PDF
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
2013
·
Injun Hwang
, Jongseob Kim
, et al.
·
IEEE Electron Device Letters
·
300
Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures
2019
·
Ali Razavieh
, Peter Zeitzoff
, et al.
·
IEEE Transactions on Nanotechnology
·
291
Displacement Damage in Silicon Detectors for High Energy Physics
2018
·
Michael Moll
·
IEEE Transactions on Nuclear Science
·
239
PDF
N+ Pocket Doped Vertical TFET Based Dielectric-Modulated Biosensor Considering Non-Ideal Hybridization Issue: A Simulation Study
2020
·
Vandana Devi Wangkheirakpam
, Brinda Bhowmick
, et al.
·
IEEE Transactions on Nanotechnology
·
198
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
·
Arthur F. Witulski
, Dennis R. Ball
, et al.
·
IEEE Transactions on Nuclear Science
·
196
PDF
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
2016
·
Michael Schroter
, Tommy Rosenbaum
, et al.
·
Proceedings of the IEEE
·
186
Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs
2012
·
Greg Leung
, Chi On Chui
·
IEEE Electron Device Letters
·
175
On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
2017
·
L. Efthymiou
, G. Longobardi
, et al.
·
Applied Physics Letters
·
167
Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies
2007
·
K. Takeuchi
, T. Fukai
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
166
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design
2005
·
B.D. Olson
, D.R. Ball
, et al.
·
IEEE Transactions on Nuclear Science
·
158
Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application
2020
·
Fei Mo
, Yusaku Tagawa
, et al.
·
IEEE Journal of the Electron Devices Society
·
148
PDF
A Highly Reliable Memory Cell Design Combined With Layout-Level Approach to Tolerant Single-Event Upsets
2016
·
Chunhua Qi
, Liyi Xiao
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
143
Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies
2015
·
I. Sanchez Esqueda
, H. J. Barnaby
, et al.
·
IEEE Transactions on Nuclear Science
·
137
PDF
Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs
2019
·
Loizos Efthymiou
, Karthick Murukesan
, et al.
·
IEEE Electron Device Letters
·
135
Design, Simulation and Performance Analysis of JLTFET Biosensor for High Sensitivity
2019
·
Girish Wadhwa
, Balwinder Raj
·
IEEE Transactions on Nanotechnology
·
128
Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors
2015
·
Jens Trommer
, Andre Heinzig
, et al.
·
IEEE Transactions on Nanotechnology
·
128
Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based Biosensor
2020
·
Sandeep Kumar
, Yashvir Singh
, et al.
·
IEEE Sensors Journal
·
126
HBD layout isolation techniques for multiple node charge collection mitigation
2005
·
J.D. Black
, A.L. Sternberg
, et al.
·
IEEE Transactions on Nuclear Science
·
125
T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor
2017
·
Prabhat Kumar Dubey
, Brajesh Kumar Kaushik
·
IEEE Transactions on Electron Devices
·
124
A new Silicon Photomultiplier structure for blue light detection
2006
·
Claudio Piemonte
·
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
·
122
Tunnel Field‐Effect Transistors (TFET)
2016
·
Jagadesh Kumar Mamidala
, Rajat Vishnoi
, et al.
·
Wiley eBooks
·
121
Theoretical study of time-resolved luminescence in semiconductors. III. Trap states in the band gap
2015
·
Matthias Maiberg
, Torsten Hölscher
, et al.
·
Journal of Applied Physics
·
117
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Works count:
6,980
Citation count:
46,010
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