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Keyword

threshold current density

Description: The current per unit area required to reach the lasing threshold in semiconductor laser devices and related structures.
OpenAlex ID: keywords/threshold-current-density
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 · Shuji Nakamura · Science · 1,875
Electromigration in thin aluminum films on titanium nitride
1976 · I. A. Blech · Journal of Applied Physics · 1,251
Gain and the threshold of three-dimensional quantum-box lasers
1986 · M. Asada, Y. Miyamoto, et al. · IEEE Journal of Quantum Electronics · 1,136
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
2016 · Siming Chen, Wei Li, et al. · Nature Photonics · 876
Two-phase flow and transport in the air cathode of proton exchange membrane fuel cells
2001 · Z.H. Wang, C.Y. Wang, et al. · Journal of Power Sources · 812
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1.3 μm room-temperature GaAs-based quantum-dot laser
1998 · D. L. Huffaker, G. Park, et al. · Applied Physics Letters · 765
Current-induced domain-wall switching in a ferromagnetic semiconductor structure
2004 · M. Yamanouchi, D. Chiba, et al. · Nature · 696
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
2007 · Jifeng Liu, Xiaochen Sun, et al. · Optics Express · 628
Junction Lasers Which Operate Continuously at Room Temperature
1970 · I. Hayashi, M. B. Panish, et al. · Applied Physics Letters · 599
InGaAs-GaAs quantum-dot lasers
1997 · D. Bimberg, N. Kirstaedter, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 577
Visualization of water buildup in the cathode of a transparent PEM fuel cell
2003 · Klaus Tüber, David Pócza, et al. · Journal of Power Sources · 561
Terahertz quantum cascade lasers operating up to ∼ 200 K with optimized oscillator strength and improved injection tunneling
2012 · S. Fathololoumi, E. Dupont, et al. · Optics Express · 557
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
1996 · Shuji Nakamura, Masayuki Senoh, et al. · Applied Physics Letters · 545
Quantum-well heterostructure lasers
1980 · N. Holonyak, R. Kolbas, et al. · IEEE Journal of Quantum Electronics · 542
Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In 0.15 Ga 0.85 As quantum well
1999 · G.T. Liu, A. Stintz, et al. · Electronics Letters · 486
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
2018 · Mengxing Wang, Wenlong Cai, et al. · Nature Electronics · 482
GaAs/Al x Ga 1−x As quantum cascade lasers
1998 · Carlo Sirtori, Peter Kruck, et al. · Applied Physics Letters · 419
3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation
2003 · Benjamin S. Williams, Hans Callebaut, et al. · Applied Physics Letters · 410
Safety limits of cathodal transcranial direct current stimulation in rats
2009 · David Liebetanz, Reinhard Koch, et al. · Clinical Neurophysiology · 401
Recent advances in lead-chalcogenide diode lasers
1979 · H. Preier · Applied Physics A · 388
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 · Shuji Nakamura, Masayuki Senoh, et al. · Applied Physics Letters · 338
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 · Shuji Nakamura, Masayuki Senoh, et al. · Applied Physics Letters · 328
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
1997 · F. Heinrichsdorff, M.-H. Mao, et al. · Applied Physics Letters · 323
Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
1996 · L V Asryan, R A Suris · Semiconductor Science and Technology · 314
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Interband cascade lasers
2015 · I Vurgaftman, R Weih, et al. · Journal of Physics D Applied Physics · 306
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Works count: 5,481
Citation count: 106,300
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