Get started
Keyword

transconductance

Description: An electronic device parameter measuring the change in output current relative to a change in input voltage.
Wikidata ID: wiki/Q1632964
OpenAlex ID: keywords/transconductance
High Performance Silicon Nanowire Field Effect Transistors
2003 · Yi Cui, Zhaohui Zhong, et al. · Nano Letters · 2,169
Organic electrochemical transistors
2018 · Jonathan Rivnay, Sahika Inal, et al. · Nature Reviews Materials · 2,078
PDF
Current saturation in zero-bandgap, top-gated graphene field-effect transistors
2008 · Inanc Meric, Melinda Y. Han, et al. · Nature Nanotechnology · 1,633
Ge/Si nanowire heterostructures as high-performance field-effect transistors
2006 · Jie Xiang, Wei Lu, et al. · Nature · 1,450
Macromolecular electronic device: Field-effect transistor with a polythiophene thin film
1986 · A. Tsumura, H. Koezuka, et al. · Applied Physics Letters · 1,254
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
1995 · Christian C. Enz, Fran�ois Krummenacher, et al. · Analog Integrated Circuits and Signal Processing · 1,233
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
2007 · Seong Jun Kang, Coskun Kocabas, et al. · Nature Nanotechnology · 1,088
Operation of Graphene Transistors at Gigahertz Frequencies
2008 · Yu-Ming Lin, Keith A. Jenkins, et al. · Nano Letters · 1,068
PDF
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
2002 · Ali Javey, Hyoungsub Kim, et al. · Nature Materials · 971
High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
1993 · M. Asif Khan, A. Bhattarai, et al. · Applied Physics Letters · 909
Gallium Nitride Nanowire Nanodevices
2002 · Yu Huang, Xiangfeng Duan, et al. · Nano Letters · 906
High transconductance organic electrochemical transistors
2013 · Dion Khodagholy, Jonathan Rivnay, et al. · Nature Communications · 862
PDF
Electrolyte-Gated Graphene Field-Effect Transistors for Detecting pH and Protein Adsorption
2009 · Yasuhide Ohno, Kenzo Maehashi, et al. · Nano Letters · 832
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
1987 · F. Balestra, S. Cristoloveanu, et al. · IEEE Electron Device Letters · 752
High-performance transistors for bioelectronics through tuning of channel thickness
2015 · Jonathan Rivnay, Pierre Leleux, et al. · Science Advances · 729
PDF
A III–V nanowire channel on silicon for high-performance vertical transistors
2012 · Katsuhiro Tomioka, Masatoshi Yoshimura, et al. · Nature · 715
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
2002 · S. J. Wind, J. Appenzeller, et al. · Applied Physics Letters · 668
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
2005 · Yong Cai, Yugang Zhou, et al. · IEEE Electron Device Letters · 665
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2001 · S.C. Binari, K. Ikossi, et al. · IEEE Transactions on Electron Devices · 657
Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
2020 · Lijun Liu, Jie Han, et al. · Science · 639
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
1966 · H.C. Pao, C.T. Sah · Solid-State Electronics · 615
High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids
2009 · Hongtao Yuan, Hidekazu Shimotani, et al. · Advanced Functional Materials · 601
FinFET scaling to 10 nm gate length
2003 · Bin Yu, Leland Chang, et al. · 596
Elementary scattering theory of the Si MOSFET
1997 · M. Lundstrom · IEEE Electron Device Letters · 586
Power electronics on InAlN/(In)GaN: Prospect for a record performance
2001 · J. Kuzmik · IEEE Electron Device Letters · 574
Works count: 14,550
Citation count: 222,400
Year
Topic
Type