Monolithic low noise amplifier for X-band applications
Year: 1998
Type: conference-paper
Abstract: This paper presents the design aspects and performance of a monolithic low noise amplifier (LNA) for X-band applications. The LNA, based on GaAs PM-HEMT technology, shows a noise figure of only 1.1 dB at room temperature and a gain of 19 dB with high gain flatness over a bandwidth of 30%, The design was induced by the requirements of real active phased array antenna modes, e. g. switched applications, high IP3 and damage level. A statistical analysis over a large number of LNAs is added showing the high yield and good uniformity of this device.
Source: AMS Acta (University of Bologna)
Authors: Feldle, Heinz-Peter, Reber, R. H.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W11279761