Year: 2007
Type: conference-paper
Abstract: IGBT and MOSFET power switches are commonly used in power converters. MOSFET for middle power and IGBT for high power converters : gate drive circuits are used to drive such components. Some applications need to control dv/dt and di/dt from power switches to reduce electromagnetic emissions. New solutions have been introduced and tested since 1990 (conresponding to the maturation of IGBT technology). This article is about a state of the art of di/dt and dv/dt methods. The authors propose original solutions with simulations and experimental results on 1200A-3300V IGBT modules.
Source: HAL
Authors: Lefranc, Pierre, Bergogne, Dominique
Institutions: Supélec, École Centrale de Lyon, Laboratoire Ampère
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W11337744