Work

Introduction and annealing of defects in GaP upon electron irradiation

Year: 1974

Type: article

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Authors: E. Yu. Brailovskii, И.Д. Конозенко, V. G. Makarenko, V. S. Manzhara, В.П. Тартачник

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W124291302

FWCI:

Cites:

Cited by: 1

Related to: 10