Work

Tunnelling current through ultra thin Silicon Dioxide in Submicronic MOS

Year: 2006

Type: conference-paper

DOI: 10.1109/ictta.2006.1684693

Authors: R. Bensegueni, S. Latreche

Institution: University Frères Mentouri Constantine 1

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1490712409

FWCI: 0.528

Cites: 6

Cited by: 2

Related to: 10