Work

On the determination of interface state density in n-InP Schottky structures by current–voltage measurements

Year: 2000

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(99)00269-5

Authors: A Ahaitouf, E Losson, A Bath

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1490820522

FWCI:

Cites: 30

Cited by: 26

Related to: 10