Year: 2012
Type: article
Abstract: Using very uniform large-scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a $D$+${D}^{\ensuremath{'}}$ peak corresponding to a double-phonon process involving both an inter- and intravalley phonon.
Source: Physical Review B
Authors: S. Bernard, E. Whiteway, V. Yu, D. G. Austing, M. Hilke
Institution: McGill University
Language: Latvian
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1502934603