Work

LPCVD SiO/sub 2/ layers prepared from SiH/sub 4/ and O/sub 2/ at 450°C in a RTP

Year: 2002

Type: conference-paper

Source: CAS proceedings

DOI: 10.1109/smicnd.1995.494925

Authors: C. Cobianu, J.B. Rem, J.H. Klootwijk, M.H.H. Weusthof, J. Holleman, P.H. Woerlee

Institutions: National Institute for Research and Development in Microtechnologies, University of Twente

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1504484871

FWCI:

Cites: 6

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Related to: 10