Year: 2006
Type: article
Abstract: Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage, and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift-diffusion model is used to determine the value of the spin-strain coupling coefficient for a strained GaAs epilayer.
Source: Physical Review B
Authors: V. Sih, H. Knotz, J. Stephens, V. R. Horowitz, A. C. Gossard, D. D. Awschalom
Institution: University of California, Santa Barbara
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1548079283