Work

Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Year: 2015

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2015.2455558

Authors: Tae Soo Jung, Si Joon Kim, Chul Ho Kim, Joohye Jung, Jaewon Na, Mardhiah Muhamad Sabri, Hyun Jae Kim

Institution: Yonsei University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G8216339495

OpenAlex ID: W1569257585

FWCI: 0.466

Cites: 27

Cited by: 8

Related to: 10