Work

Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

Year: 2003

Type: conference-paper

Source: International Workshop on Gate Insulator (IWGI)

DOI: 10.1109/iwgi.2003.159209

Authors: K. Kita, M. Sasagawa, K. Tomida, M. Tohyama, K. Kyuno, A. Toriumi

Institution: The University of Tokyo

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W1575453056

FWCI: 1.345

Cites: 6

Cited by: 5

Related to: 10