Work

High power Al-free 808 nm laser bars

Year: 2002

Type: conference-paper

Source: IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

DOI: 10.1109/leos.1996.565115

Authors: J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1590797752

FWCI:

Cites: 4

Cited by: 4

Related to: 10