Year: 2012
Type: book-chapter
Abstract: Well-established analysis techniques, including secondary ions mass-spectrometry (SIMS) (Benninghoven et al., 1987; Brundle et al., 1992; Alford et al., 2007), high-resolution transmission electron microscopy (HRTEM) (Hirsch et al., 1977; Horiuchi, 1994; Williams & Carter, 2009) allow direct observation of the effect of ion implantation, although they suffer from being destructive, time consuming and unusable for real-time in-line monitoring of ion implantation process or to measure uniformity. Some of the more common methods, like sheet resistance measurements (four-point probe, FPP) (Keenan et al., 1985; Johnson, 2001; Schroder, 2006) and thermal-wave technology (TW) (Smith et al., 1985; Guidotti & van Driel, 1985; Smith et al., 1986), are fast and relatively inexpensive, but require special efforts in order to get reliable information and exclude measurement errors. Ideally, the technique should be non-destructive to the sample, fast, accurate and precise to be used for routine process monitoring and control.
Source: InTech eBooks
DOI: 10.5772/37758
Authors: Denis Shamiryan, Dmitriy V.
Institution: GlobalFoundries (Germany)
Language: English
Subfield: Surfaces, Coatings and Films
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W1591965243