Work

Combined effect of NBTI and Channel Hot Carrier effects in pMOSFETs

Year: 2006

Type: conference-paper

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/irws.2005.1609553

Authors: C. Guerin, V. Huard, A. Bravaix, M. Denais, J.M. Roux, F. Perrier, W. Baks

Institutions: STMicroelectronics (France), Philips (France), Centre National de la Recherche Scientifique

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1592943953

FWCI: 1.583

Cites: 4

Cited by: 19

Related to: 10