Work

Transient Turn-ON Characteristics of the Fin p-Body IGBT

Year: 2015

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2015.2445350

Authors: Hao Feng, Wentao Yang, Yuichi Onozawa, Takashi Yoshimura, Akira Tamenori, Johnny K. O. Sin

Institutions: Hong Kong University of Science and Technology, Fuji Electric (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Hong Kong University of Science and Technology

OpenAlex ID: W1599108317

FWCI: 1.923

Cites: 23

Cited by: 56

Related to: 10