30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics
Year: 2015
Type: conference-paper
Source: Symposium on VLSI Technology
Authors: S. Matsuda, T. Hiramatsu, R. Honda, D. Matsubayashi, H. Tomisu, Y. Kobayashi, K. Tochibayashi, R. Hodo, H. Fujiki, Y. Yamamoto, M. Tsubuku, Y. Okazaki, S. Yamazaki
Institution: Semiconductor Energy Laboratory (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1600435955