Work

MFMIS Structure for Nonvolatile Ferroelectric Memory Using PZT Thin Film

Year: 1998

Type: article

Source: IEICE Transactions on Electronics

Authors: Toshiyuki Kawasaki, Yoshikazu Akiyama, Shunsuke Fujita, Shiro Satoh

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W160632236

FWCI:

Cites:

Cited by: 2

Related to: 10