Work

Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices

Year: 2009

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3155202

Authors: Tae-Yon Lee, Kijoon H. P. Kim, Dong-Seok Suh, Cheolkyu Kim, Youn-Seon Kang, David G. Cahill, Dongbok Lee, Min-Hyun Lee, Min-Ho Kwon, Ki-Bum Kim, Yoonho Khang

Institutions: Samsung (South Korea), Samsung Electronics (South Korea), Seoul National University, University of Illinois Urbana-Champaign, University of Illinois System

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W1610074520

FWCI: 3.544

Cites: 10

Cited by: 49

Related to: 10