Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition
Year: 2006
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2374806
Institutions: Pusan National University, Korea Basic Science Institute
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1628061358