Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm
Year: 1988
Type: article
Source: Electronics Letters
DOI: 10.1049/el:19880499
Authors: P.S. Whitney, K. Uwai, H. Nakagome, K. Takahei
Institutions: NTT (Japan), NTT Basic Research Laboratories
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1661819696